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APTM50UM13S-ALN Datasheet(PDF) 2 Page - Advanced Power Technology

Part No. APTM50UM13S-ALN
Description  Single switch Series & parallel diodes MOSFET Power Module
Download  6 Pages
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Maker  ADPOW [Advanced Power Technology]
Homepage  http://www.advpowertech.com
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APTM50UM13S-ALN Datasheet(HTML) 2 Page - Advanced Power Technology

   
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APTM50UM13S-AlN
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 1mA
500
V
VGS = 0V,VDS = 500V
Tj = 25°C
400
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 400V
Tj = 125°C
2000
µA
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 167.5A
13
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 20mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±300
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
42.2
Coss
Output Capacitance
8.24
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.42
nF
Qg
Total gate Charge
800
Qgs
Gate – Source Charge
200
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID =335A
420
nC
Td(on)
Turn-on Delay Time
21
Tr
Rise Time
42
Td(off)
Turn-off Delay Time
96
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 333V
ID = 335A
RG = 0.8Ω
100
ns
Eon
Turn-on Switching Energy
4
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 333V
ID = 335A, RG = 0.8Ω
4.16
mJ
Eon
Turn-on Switching Energy
6.32
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 333V
ID = 335A, RG =0.8Ω
4.64
mJ
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
240
A
IF = 240A
1.1
1.15
IF = 480A
1.4
VF
Diode Forward Voltage
IF = 240A
Tj = 125°C
0.9
V
Tj = 25°C
31
trr
Reverse Recovery Time
IF = 240A
VR = 133V
di/dt = 800A/µs
Tj = 125°C
60
ns
Tj = 25°C
240
Qrr
Reverse Recovery Charge
IF = 240A
VR = 133V
di/dt = 800A/µs
Tj = 125°C
1000
nC


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