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APTGT300U170D4G Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTGT300U170D4G Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 5 page  APTGT300U170D4G APT website – http://www.advancedpower.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1700V 1 mA Tj = 25°C 2.0 2.4 VCE(sat) Collector Emitter saturation Voltage VGE = 15V IC = 300A Tj = 125°C 2.4 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 12mA 5.2 5.8 6.4 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 25 Cres Reverse Transfer Capacitance VGE = 0V, VCE = 25V f = 1MHz 0.9 nF Td(on) Turn-on Delay Time 280 Tr Rise Time 100 Td(off) Turn-off Delay Time 750 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 300A RG = 4.7Ω 100 ns Td(on) Turn-on Delay Time 330 Tr Rise Time 100 Td(off) Turn-off Delay Time 900 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 300A RG = 4.7Ω 200 ns Eon Turn On Energy Tj = 125°C 115 Eoff Turn Off Energy VGE = ±15V VBus = 900V IC = 300A RG = 4.7Ω Tj = 125°C 95 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1700 V Tj = 25°C 750 IRM Maximum Reverse Leakage Current VR=1700V Tj = 125°C 1000 µA IF DC forward current Tc=80°C 300 A Tj = 25°C 1.8 2.2 VF Forward Voltage IF = 300A VGE = 0V Tj = 125°C 1.9 V Tj = 25°C 35 Er Reverse Recovery Energy Tj = 125°C 70 mJ Tj = 25°C 410 trr Reverse Recovery Time Tj = 125°C 520 ns Tj = 25°C 75 Qrr Reverse Recovery Charge IF = 300A VR = 900V di/dt =3500A/µs Tj = 125°C 125 µC |
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