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APTGT300H60 Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTGT300H60 Datasheet(HTML) 2 Page - Advanced Power Technology |
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2 / 5 page  APTGT300H60 APT website – http://www.advancedpower.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 600V 350 µA Tj = 25°C 1.4 1.8 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 300A Tj = 150°C 1.5 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 1.5 mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 500 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 24 Coes Output Capacitance 1.5 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.75 nF Td(on) Turn-on Delay Time 115 Tr Rise Time 45 Td(off) Turn-off Delay Time 200 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 300A RG = 3.3Ω 55 ns Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 250 Tf Fall Time 70 ns Eon Turn on Energy 5.2 Eoff Turn off Energy Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 300A RG = 3.3Ω 10.5 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current VR=600V Tj = 150°C 600 µA IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 80°C 300 A Tj = 25°C 1.5 1.9 VF Diode Forward Voltage IF = 300A VGE = 0V Tj = 150°C 1.4 V Tj = 25°C 120 trr Reverse Recovery Time Tj = 150°C 210 ns Tj = 25°C 13.5 Qrr Reverse Recovery Charge IF = 300A VR = 300V di/dt =3100A/µs Tj = 150°C 28.5 µC |
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