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XL1005 Datasheet(PDF) 1 Page - Mimix Broadband

Part No. XL1005
Description  5.0-20.0 GHz GaAs MMIC Low Noise Amplifier
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Maker  MIMIX [Mimix Broadband]
Homepage  http://www.mimixbroadband.com
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XL1005 Datasheet(HTML) 1 Page - Mimix Broadband

   
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5.0-20.0 GHz GaAs MMIC
Low Noise Amplifier
Page 1 of 6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice.
©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
May 2006 - Rev 10-May-06
L1005
Absolute Maximum Ratings
Features
Wideband Low Noise Amplifier
13.0 dB Small Signal Gain
2.2 dB Noise Figure
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Supply Voltage (Vd1)
Supply Current (Id)
Gate Bias Voltage (Vg1)
Gate Bias Voltage (Vg2)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+5.5 VDC
120 mA
+0.3 VDC
TBD
+15.0 dBm
-65 to +165 OC
-55 to MTTF Table
MTTF Table
(1) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
1
Chip Device Layout
1
General Description
Parameter
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
VDC
VDC
VDC
mA
Min.
5.0
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
7.0
14.0
13.0
+/-2.0
TBD
2.2
+16.0
+26.0
+5.0
-0.3
+1.5
30
Max.
20.0
-
-
-
-
-
-
-
-
-
-
-
-
Mimix Broadband’s single stage 5.0-20.0 GHz GaAs
MMIC low noise amplifier has a small signal gain of 13.0
dB with a noise figure of 2.2 dB across the band. This
MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
device model technology, and is based upon electron
beam lithography to ensure high repeatability and
uniformity. The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
or eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Electrical Characteristics (AmbientTemperatureT = 25 oC)
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1 dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg1)
Gate Bias Voltage (Vg2)
Supply Current (Id) (Vd=5.0V, Vg1=-0.3V, Vg2=1.5V)


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