17.0-35.0 GHz GaAs MMIC

Low Noise Amplifier

Page 6 of 8

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2005 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

App Note [1] Biasing -

As shown in the bonding diagram, this device operates using a self-biased architecture and only

requires a single bias voltage. All DC pads (V1 through V8) are tied together on-chip. Even though V1 or V5 are shown as

main connections, any of the eight DC pads may be used to bias the device. Bias is nominally V1 or V5=5V, Id=55mA.

App Note [2] Bias Arrangement

- The DC pad at the top (V1) should be connected to one DC bypass capacitor

(~100-200 pf ) and the DC pad at the bottom (V5) should be connected using another DC bypass capacitor

(~100-200 pf ). Additional DC bypass capacitance (~0.01 µf ) is also recommended. Capacitance should be as close to the

device as possible.

MTTFTable

Backplate

Temperature

55 deg Celsius

75 deg Celsius

95 deg Celsius

Channel

Temperature

89.4 deg Celsius

111.9 deg Celsius

134.2 deg Celsius

FITs

5.04E-02

7.39E-01

7.84E+00

MTTF Hours

1.98E+10

1.35E+09

1.28E+08

Rth

Bias Conditions:

V1 or V5=5.0V, Id=55 mA

These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.

March 2005 - Rev 01-Mar-05

L1001