20.0-40.0 GHz GaAs MMIC

Low Noise Amplifier

Page 6 of 7

App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain

bias. Bias is nominally Vd=3V, I=35mA or Vd=5V, I=50mA.

App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.

Additional DC bypass capacitance (~0.01 uF) is also recommended.

Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099

Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com

Characteristic Data and Specifications are subject to change without notice.

©2005 Mimix Broadband, Inc.

Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept

their obligation to be compliant with U.S. Export Laws.

MTTFTables

Backplate

Temperature

55 deg Celsius

75 deg Celsius

95 deg Celsius

Channel

Temperature

72.2 deg Celsius

93.6 deg Celsius

114.7 deg Celsius

FITs

3.96E-03

6.52E-02

7.76E-01

MTTF Hours

2.52E+11

1.53E+10

1.29E+09

Rth

164.0° C/W

176.7° C/W

188.0° C/W

Bias Conditions: Vd=3.0V and Id=35.0 mA

Backplate

Temperature

55 deg Celsius

75 deg Celsius

95 deg Celsius

Channel

Temperature

98.9 deg Celsius

122.1 deg Celsius

145.0 deg Celsius

FITs

1.21E-01

1.67E+00

1.67E+01

MTTF Hours

8.24E+09

5.99E+08

6.00E+07

Rth

175.8° C/W

188.4° C/W

199.9° C/W

Bias Conditions: Vd=5.0V and Id=50 mA

These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.

Device Schematic

R=75.0

RFin

RFout

Vd1

R=50.0

R=5.0

R=30.0

R=31.8

R=200.0

R=5.0

R=640.0

R=110.0

R=3.3

R=20.0

R=21.0

R=200.0

R=50.0

R=200.0

R=400.0

R=350.0

R=50.0

R=50.0

R=50.0

R=22.2

R=22.2

R=5.0

L1000

April 2005 - Rev 01-Apr-05