MSC4003

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DESCRIPTION:

DESCRIPTION:

The MSC4003 common-base, hermetically sealed silicon NPN

microwave power transistor features a unique Microgrid

™

™

structure and can withstand 3:1 VSWR at any phase angle under

rated conditions. It is designed for Class C amplifier applications

in the 2.0 – 4.4 GHz frequency range.

ABSOLUTE MAXIMUM RATINGS (T

CASE

= 25

= 25°°C)

C)

Symbol

Parameter

Value

Unit

Power Dissipation*

14.0

W

Device Current*

0.5

A

Collector Supply Voltage*

30

V

Junction Temperature (Pulsed RF Operation)

+200

°°C

Storage Temperature

-65 to +200

°°C

THERMAL DATA

THERMAL DATA

Junction-Case Thermal Resistance*

12.5

°°C/W

*Applies only to rated RF amplifier operation

Features

Features

• 3:1 VSWR AT RATED CONDITIONS

• P

RF AND MICROWAVE TRANSISTORS

GENERAL PURPOSE AMPLIFIER APPLICATIONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA

18936-1013

PHONE: (215) 631-9840

FAX: (215) 631-9855