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MDS800

800 Watts, 50 Volts

Pulsed Avionics at 1090 MHz

GENERAL DESCRIPTION

The MDS800 is a high power COMMON BASE bipolar transistor.

It is

designed for pulsed systems at 1090 MHz, with the pulse width and duty

required for MODE-S applications. The device has gold thin-film metalization

and emitter ballasting for proven highest MTTF. The transistor includes input

and output prematch for broadband capability. Low thermal resistance package

reduces junction temperature, extends life.

CASE OUTLINE

55ST-1

(Common Base)

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25

1458 W

Maximum Voltage and Current

60 V

3.5 V

60 A

Maximum Temperatures

Storage Temperature

-65 to +200

°C

Operating Junction Temperature

+200

°C

ELECTRICAL CHARACTERISTICS @ 25

°°°°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Output

F = 1090 MHz

800

W

Power Input

110

Power Gain

Burst width = 128µs

8.6

dB

η

c

Collector Efficiency

LTDF = 2%

40

%

Return Loss

-12

dB

Power Droop

0.5

dB

VSWR

Load Mismatch Tolerance

1

F = 1090 MHz

4.0:1

FUNCTIONAL CHARACTERISTICS @ 25

°°°°C

Emitter to Base Breakdown

Ie = 30 mA

3.5

V

Collector to Emitter Breakdown

Ic = 50 mA

65

V

DC – Current Gain

Vce = 5V, Ic = 1A

20

Thermal Resistance

0.12

°C/W

NOTES:

1. At rated output power and pulse conditions

2. 128 µs burst, 0.5 µs on/0.5 µs off, 6.4 ms period

Rev. B– Dec 2005