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MDS800 Datasheet(PDF) 1 Page - Advanced Power Technology |
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MDS800 Datasheet(HTML) 1 Page - Advanced Power Technology |
1 / 2 page Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. MDS800 800 Watts, 50 Volts Pulsed Avionics at 1090 MHz GENERAL DESCRIPTION The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1090 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55ST-1 (Common Base) ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25 °C1 1458 W Maximum Voltage and Current Collector to Base Voltage (BVces) 60 V Emitter to Base Voltage (BVebo) 3.5 V Collector Current (Ic) 60 A Maximum Temperatures Storage Temperature -65 to +200 °C Operating Junction Temperature +200 °C ELECTRICAL CHARACTERISTICS @ 25 °°°°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS Pout Power Output F = 1090 MHz 800 W Pin Power Input Vcc = 50 Volts 110 Pg Power Gain Burst width = 128µs 8.6 dB η c Collector Efficiency LTDF = 2% 40 % RL Return Loss -12 dB Pd Power Droop 0.5 dB VSWR Load Mismatch Tolerance 1 F = 1090 MHz 4.0:1 FUNCTIONAL CHARACTERISTICS @ 25 °°°°C BVebo Emitter to Base Breakdown Ie = 30 mA 3.5 V BVces Collector to Emitter Breakdown Ic = 50 mA 65 V hFE DC – Current Gain Vce = 5V, Ic = 1A 20 θjc1 Thermal Resistance 0.12 °C/W NOTES: 1. At rated output power and pulse conditions 2. 128 µs burst, 0.5 µs on/0.5 µs off, 6.4 ms period Rev. B– Dec 2005 |
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