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APTM20DUM05 Datasheet(PDF) 2 Page - Advanced Power Technology |
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APTM20DUM05 Datasheet(HTML) 2 Page - Advanced Power Technology |
2 / 6 page APTM20DUM05 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage VGS = 0V, ID = 500µA 200 V VGS = 0V,VDS = 200V Tj = 25°C 200 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 160V Tj = 125°C 1000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 158.5A 5 m W VGS(th) Gate Threshold Voltage VGS = VDS, ID = 10mA 3 5 V IGSS Gate – Source Leakage Current VGS = ±30 V, VDS = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 27.4 Coss Output Capacitance 8.72 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.38 nF Qg Total gate Charge 448 Qgs Gate – Source Charge 172 Qgd Gate – Drain Charge VGS = 10V VBus = 100V ID = 300A 188 nC Td(on) Turn-on Delay Time 28 Tr Rise Time 56 Td(off) Turn-off Delay Time 81 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 133V ID = 300A RG = 1.2 W 99 ns Eon Turn-on Switching Energy u 1852 Eoff Turn-off Switching Energy v Inductive switching @ 25°C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2Ω 1820 µJ Eon Turn-on Switching Energy u 2432 Eoff Turn-off Switching Energy v Inductive switching @ 125°C VGS = 15V, VBus = 133V ID = 300A, RG = 1.2Ω 2124 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 317 IS Continuous Source current (Body diode) Tc = 80°C 237 A VSD Diode Forward Voltage VGS = 0V, IS = - 300A 1.3 V dv/dt Peak Diode Recovery w 5 V/ns trr Reverse Recovery Time 284 ns Qrr Reverse Recovery Charge IS = -300A, VR = 100V diS/dt = 400A/µs 12.24 µC u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1. w dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS £ - 300A di/dt £ 700A/µs VR £ VDSS Tj £ 150°C |
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