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APT60N60BCS Datasheet(PDF) 2 Page - Advanced Power Technology

Part No. APT60N60BCS
Description  Super Junction MOSFET
Download  5 Pages
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Maker  ADPOW [Advanced Power Technology]
Homepage  http://www.advpowertech.com
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APT60N60BCS Datasheet(HTML) 2 Page - Advanced Power Technology

   
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SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.30
0.25
0.20
0.15
0.10
0.05
0
0.5
0.1
0.3
0.7
D = 0.9
0.05
FINAL DATA SHEET WITH MOS 7 FORMAT
Peak TJ = PDM x ZθJC + TC
Duty Factor D =
t1/t2
t2
t1
Note:
APT Reserves the right to change, without notice, the specifications and information contained herein.
DYNAMIC CHARACTERISTICS
APT60N60B_SCS(G)
Symbol
RθJC
RθJA
MIN
TYP
MAX
0.29
62
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as
PAV = EAR*f
3 Starting T
j = +25°C, L = 33.23mH, RG = 25Ω, Peak IL = 11A
4 Pulse Test: Pulse width < 380µs, Duty Cycle < 2%
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 5
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy 6
Turn-off Switching Energy
Turn-on Switching Energy 6
Turn-off Switching Energy
Test Conditions
V
GS = 0V
V
DS = 25V
f = 1 MHz
V
GS = 10V
V
DD = 400V
I
D = 44A @ 25°C
RESISTIVE SWITCHING
V
GS = 15V
V
DD = 400V
I
D = 44A @ 25°C
R
G = 3.3Ω
INDUCTIVE SWITCHING @ 25°C
V
DD = 400V, VGS = 15V
I
D = 44A, RG = 4.3Ω
INDUCTIVE SWITCHING @ 125°C
V
DD = 400V, VGS = 15V
I
D = 44A, RG = 4.3Ω
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See figures 18, 20.
7 We do not recommend using this CoolMOS™ product in topologies
that have fee wheeling load current conducted in the body diode that is
hard commutated. The current commutation is very "snappy", resulting in
high di/dt at the completion of commutation, and the likelihood of severe
over-voltage transients due to the resulting high dv/dt.
MIN
TYP
MAX
7200
8500
290
150
190
34
50
30
20
100
10
675
520
1100
635
UNIT
pF
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current 1 (Body Diode)
Diode Forward Voltage 4 (V
GS = 0V, IS = -44A)
Reverse Recovery Time (I
S = -44A, dlS/dt = 100A/µs)
Reverse Recovery Charge (I
S = -44A, dlS/dt = 100A/µs)
Peak Diode Recovery dv/dt 7
UNIT
Amps
Volts
ns
µC
V/ns
MIN
TYP
MAX
44
180
1.2
600
17
4
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
dv/
dt
THERMAL CHARACTERISTICS


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