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APT31N60BCS Datasheet(PDF) 1 Page - Advanced Power Technology |
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APT31N60BCS Datasheet(HTML) 1 Page - Advanced Power Technology |
1 / 5 page FINAL DATA SHEET WITH MOS 7 FORMAT C Power Semiconductors O O LMOS TO-247 D3PAK G D S (S) (B) 600V 31A 0.100Ω APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Popular TO-247 or Surface Mount D3 Package Super Junction MOSFET MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Characteristic / Test Conditions Drain-Source Breakdown Voltage (V GS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (V GS = 10V, ID = 18A) Zero Gate Voltage Drain Current (V DS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (V DS = 600V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (V GS = ±20V, VDS = 0V) Gate Threshold Voltage (V DS = VGS, ID = 1.2mA) Symbol V DSS I D I DM V GS P D T J,TSTG T L dv/dt I AR E AR E AS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Continuous Drain Current @ T C = 100°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Total Power Dissipation @ T C = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. MOSFET dv/dt Ruggedness (VDS = 480V) Avalanche Current 2 Repetitive Avalanche Energy 2 Single Pulse Avalanche Energy 3 UNIT Volts Amps Volts Watts W/°C °C V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol V (BR)DSS R DS(on) I DSS I GSS V GS(th) UNIT Volts Ohms µA nA Volts APT31N60B_SCS(G) 600 31 19 93 ±30 255 2.00 -55 to 150 260 50 11 1.2 800 MIN TYP MAX 600 0.100 10 TBD ±100 2.1 3 3.9 APT Website - http://www.advancedpower.com "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade- mark of Infineon Technologies AG." |
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