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AP4569GD Datasheet(PDF) 3 Page - Advanced Power Electronics Corp.

Part # AP4569GD
Description  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

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AP4569GD
P-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-40
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃,ID=-1mA
-
-0.03
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
2
VGS=-10V, ID=-3A
-
-
90
VGS=-4.5V, ID=-2A
-
-
130
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-5V, ID=-3A
-
4
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-40V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-32V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
Qg
Total Gate Charge
2
ID=-3A
-
7
12
nC
Qgs
Gate-Source Charge
VDS=-30V
-
1.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4
-
nC
td(on)
Turn-on Delay Time
2
VDS=-20V
-
9
-
ns
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
24
-
ns
tf
Fall Time
RD=20Ω
-5
-
ns
Ciss
Input Capacitance
VGS=0V
-
490
780
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
65
-
pF
Rg
Gate Resistance
f=1.0MHz
-
6.5
9.5
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
VSD
Forward On Voltage
2
IS=-1.5A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-3A, VGS=0V
-
22
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
20
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board , t <10sec ; 90℃/W when mounted on min. copper pad.
3/7


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