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AP2531GY Datasheet(PDF) 3 Page - Advanced Power Electronics Corp.

Part # AP2531GY
Description  N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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Manufacturer  A-POWER [Advanced Power Electronics Corp.]
Direct Link  http://www.a-power.com.tw
Logo A-POWER - Advanced Power Electronics Corp.

AP2531GY Datasheet(HTML) 3 Page - Advanced Power Electronics Corp.

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AP2531GY
P-CH Electrical Characteristics@Tj=25
oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-16
-
-
V
ΔBV
DSS/ΔTj
Breakdown Voltage Temperature Coefficient
Reference to 25℃, ID=-1mA
-
0.01
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V, ID=-2A
-
-
125
VGS=-2.5V, ID=-1.6A
-
-
155
VGS=-1.8V, ID=-1A
-
-
200
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-0.2
-
-1
V
gfs
Forward Transconductance
VDS=-5V, ID=-2A
-
5
-
S
IDSS
Drain-Source Leakage Current (Tj=25
oC)
VDS=-16V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (Tj=70
oC)
VDS=-12V ,VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=±8V
-
-
±100
nA
Qg
Total Gate Charge
2
ID=-2A
-
6
10
nC
Qgs
Gate-Source Charge
VDS=-10V
-
0.8
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
2
-
nC
td(on)
Turn-on Delay Time
2
VDS=-10V
-
7
-
ns
tr
Rise Time
ID=-1A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-5V
-
23
-
ns
tf
Fall Time
RD=10Ω
-24
-
ns
Ciss
Input Capacitance
VGS=0V
-
370
600
pF
Coss
Output Capacitance
VDS=-25V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
60
-
pF
Rg
Gate Resistance
f=1.0MHz
-
8
12
Ω
Source-Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VSD
Forward On Voltage
2
IS=-0.9A, VGS=0V
-
-
-1.3
V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in
2 copper pad of FR4 board, t<5sec ; 180℃/W when mounted on min. copper pad.
3/7


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