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RGT50NS65D Datasheet(PDF) 2 Page - Rohm

Part # RGT50NS65D
Description  650V 25A Field Stop Trench IGBT
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

RGT50NS65D Datasheet(HTML) 2 Page - Rohm

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Data Sheet
RGT50NS65D
lThermal Resistance
lIGBT Electrical Characteristics (at T
j = 25°C unless otherwise specified)
Collector - Emitter Saturation
Voltage
Unit
Min.
Typ.
Max.
Thermal Resistance IGBT Junction - Case
Rθ(j-c)
-
-
0.77
°C/W
Parameter
Symbol
Values
°C/W
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Thermal Resistance Diode Junction - Case
Rθ(j-c)
-
-
2.12
-
-
V
Collector Cut - off Current
ICES
VCE = 650V, VGE = 0V
-
-
10
μA
Collector - Emitter Breakdown
Voltage
BVCES
IC = 10μA, VGE = 0V
650
-
200
nA
Gate - Emitter Threshold
Voltage
VGE(th)
VCE = 5V, IC = 17.5mA
5.0
6.0
7.0
V
Gate - Emitter Leakage Current
IGES
VGE = 30V, VCE = 0V
-
VCE(sat)
IC = 25A, VGE = 15V
V
Tj = 25°C
-
1.65
2.1
Tj = 175°C
-
2.15
-
2/11
2016.01 - Rev.A


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