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AS8E512K8 Datasheet(PDF) 3 Page - Austin Semiconductor |
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AS8E512K8 Datasheet(HTML) 3 Page - Austin Semiconductor |
3 / 13 page AS8E512K8 Rev. 2.0 12/99 Austin Semiconductor, Inc. reserves the right to change products or specifications without notice. 3 EEPROM AS8E512K8 Austin Semiconductor, Inc. PIN CAPACITANCE (f= 1MHz, T = 25° C)(1) ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC<T A<+125 oC; Vcc = 5V +10%) OPERATING MODES ABSOLUTE MAXIMUM RATINGS* Voltage on Vcc Supply Relative to Vss Supply/Input Voltage Range1.........................-0.6V to +6.25V DC Voltage on OE\ and A9....................................-0.6V to +13.5V DC Voltage on all other pins..................................-0.6V to +6.25V DC Storage Temperature.............................................-65 °C to +150°C Operating Temperature, T A (Ambient)................-55 oC to +125oC Lead Temperature (soldering 10 seconds)........................+300oC Maximum Junction Temperature**....................................+165 °C NOTE: 1. Including NC pins, with respect to ground. *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ** Junction temperature depends upon package type, cycle time, loading, ambient temperature and airflow. NOTE: 1. X can be V IL or V IH. 2. Refer to AC Programming Waveforms. SYMBOL CONDITIONS MAX UNIT CADD, OE\, WE\ VIN = 0V, f = 1MHz 45 pF CI/O VOUT = 0V, f = 1MHz 50 pF CCE\ VIN = 0V, f = 1MHz 10 pF MODE CE\ OE\ WE\ I/O Read VIL VIL VIH DOUT Write 2 VIL VIH VIL DIN Standby/Write Inhibit VIH X 1 X High Z Write Inhibit X X VIH Write Inhibit X VIL X Output Disable X VIH X High Z PARAMETER CONDITION SYMBOL MIN MAX UNITS Input Load Current VIN = OV to Vcc + 1V ILI -20 20 µΑ Output Leakage Current VI/O = OV to Vcc ILO -20 20 µΑ Vcc Standby Current CMOS CE\ = Vcc -0.2V to Vcc + 1 ISB1 mA Vcc Standby Current TTL CE\ = 2.2V to Vcc + 1 ISB2 20 mA Vcc Active Current F = 5 MHz; IOUT = 0 mA ICC 120 mA Input Low Voltage VIL 0.8 V Input High Voltage VIH 2V Output Low Voltage IOL = 2.1 mA VOL 0.45 V Output High Voltage IOH = -400 µA VOH1 2.4 V Output High Voltage CMOS IOH = -100 µA; Vcc = 4.5V VOH2 4.2 V |
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