M11L416256SA datasheet(5/16 Pages) ESMT

Part #	M11L416256SA

Description	256 K x 16 DRAM EDO PAGE MODE

Download	16 Pages

Scroll/Zoom	100%

Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

Logo

5 / 16 page

EliteMT

M11L416256SA

(Continued)

-35

PARAMETER

SYMBOL

MIN

MAX

UNIT

NOTES

Read Command Hold Time Reference to

CAS

tRCH

0

ns

9,15,19

Read Command Hold Time Reference to

RAS

tRRH

0

ns

9

CAS to Output in Low-Z

tCLZ

3

ns

20

Output Buffer Turn-off Delay From

CAS or

RAS

tOFF1

3

15

ns

10,17,20

Output Buffer Turn-off to

OE

tOFF2

8

ns

17,26

Write Command Setup Time

tWCS

0

ns

11,15,18

Write Command Hold Time

tWCH

5

ns

15,25

Write Command Hold Time(Reference to

RAS )

tWCR

30

ns

15

Write Command Pulse Width

tWP

5

ns

15

Write Command to

RAS Lead Time

tRWL

9

ns

15

Write Command to

CAS Lead Time

tCWL

7

ns

15,19

Data-in Setup Time

tDS

0

ns

12,20

Data-in Hold Time

tDH

5

ns

12,20

Data-in Hold Time (Reference to

RAS )

tDHR

30

ns

RAS to

WE Delay Time

tRWD

51

ns

11

Column Address to

WE Delay Time

tAWD

34

ns

11

CAS to

WE Delay Time

tCWD

26

ns

11,18

Transition Time (rise or fall)

tT

2.5

50

ns

2,3

Refresh Period (512 cycles)

tREF

8

ms

RAS to CAS Precharge Time

tRPC

10

ns

CAS Setup Time(CBR REFRESH)

tCSR

10

ns

1,18

CAS Hold Time(CBR REFRESH)

tCHR

10

ns

1,19

OE Hold Time From

WE During

Read-Mode-Write Cycle

tOEH

4

ns

16

OE Low to CAS High Setup Time

tOES

4

ns

OE High Hold Time From CAS High

tOEHC

2

ns

OE Precharge Time

tOEP

2

ns

OE Setup Prior to RAS During Hidden

Refresh Cycle

tORD

0

ns

Last

CAS Going Low to First CAS

Returning High

tCLCH

5

ns

21

Data Output Hold After

CAS Returning Low

tCOH

3

ns

Output Disable Delay From

WE

tWHZ

3

7

ns

Self Refresh

RAS Low Pulse width

tRASS

100

μ s

27,28

Self Refresh

RAS High Precharge Time

tRPS

65

ns

27,28

Self Refresh

CAS Hold Time

tCHS

-50

ns

27,28

Elite Memory Technology Inc

Publication Date: Aug. 2005

Revision : 1.4

5/16

Similar Part No. - M11L416256SA

Manufacturer	Part #	Datasheet	Description
Meder Electronic	M11	144Kb / 1P	Magnet
Tripp Lite. All Rights ...	M110-003-WH	474Kb / 2P	USB Sync/Charge Cable with Apple 30-Pin Dock Connector, White, 3 ft. (1 m)
JDS Uniphase Corporatio...	M110-1047-050	192Kb / 5P	Q-Switched IR Laser
JDS Uniphase Corporatio...	M110-1047-100	192Kb / 5P	Q-Switched IR Laser
Tripp Lite. All Rights ...	M110-10N-BK	488Kb / 2P	USB Sync/Charge Cable with Apple 30-Pin Dock Connector, Black, 10 in. (.24 m)

More results

Similar Description - M11L416256SA

Manufacturer	Part #	Datasheet	Description
Elite Semiconductor Mem...	M11B416256A	375Kb / 15P	256 K x 16 DRAM EDO PAGE MODE
List of Unclassifed Man...	M11B11664A	339Kb / 15P	64 K x 16 DRAM EDO PAGE MODE
Micron Technology	MT4C16270	278Kb / 22P	DRAM 256K X 16 DRAM 5V, EDO PAGE MODE
Siemens Semiconductor G...	HYB314175BJ-50-	1Mb / 24P	3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
Integrated Silicon Solu...	IS41C16256C	475Kb / 22P	4Mb DRAM WITH EDO PAGE MODE
Austin Semiconductor	AS4LC4M4883C	191Kb / 20P	4 MEG x 4 DRAM 3.3V, EDO PAGE MODE
Integrated Silicon Solu...	IS41C16100C	615Kb / 22P	16Mb DRAM WITH EDO PAGE MODE
Integrated Silicon Solu...	IS41C44002C	367Kb / 19P	16Mb DRAM WITH EDO PAGE MODE
Sanyo Semicon Device	LC321667BJ	624Kb / 30P	1 MEG (65536 words X 16 bits) DRAM EDO Page Mode, Byte Write???
Taiwan Memory Technolog...	T2316162A	139Kb / 13P	1024K x 16 DYNAMIC RAM EDO PAGE MODE?

More results

M11L416256SA Datasheet(PDF) 5 Page - Elite Semiconductor Memory Technology Inc.

M11L416256SA Datasheet(HTML) 5 Page - Elite Semiconductor Memory Technology Inc.

Similar Part No. - M11L416256SA

Similar Description - M11L416256SA

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL