R.1.120799
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GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
ITC1100
1000 WATT, 50V, Pulsed
Avionics 1030 MHz
GENERAL DESCRIPTION
The ITC1100 is a common base bipolar transistor. It is designed for pulsed
interrogator systems in the frequency band of 1030 MHz. The device has gold
thin-film metallization for proven high MTTF. The transistor includes input
returns for improved output rise time . Low thermal resistance package reduces
junction temperature which extends the life time of the product.
CASE OUTLINE
55SW, Style 1
Common Base
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation
1 @25
°C (P
d)
3400 W
Thermal Resistance
1 (
θ
JC).08°C/W
Voltage and Current
Collector-Base Voltage
65V
Emitter-Base Voltage
3.5V
Collector Current
1
80A
Temperatures
Storage Temperature
-40 to +150
°C
Operating Junction Temperature
1
+200
°C
ELECTRICAL CHARACTERISTICS @ 25
°C
SYMBOL
CHARACTERISTICS
TEST
CONDITIONS
MIN
TYP
MAX
UNITS
BVebo
2
Emitter-Base Breakdown(open)
Ie=50mA
3.5
V
BVces
Collector-Emitter Breakdown(shorted)
Ic=30mA
65
V
BVceo
2
Collector-Emitter Breakdown (open)
Ic=30mA
30
V
hFE
2
DC Current Gain
Ic=5A, Vce=5V
20
100
β
FUNCTIONAL CHARACTERISTICS @ 25
°C
GPB
Common Base Power Gain
Vcc = 50V, F = 1030MHz,
Pout=1000W Peak Min, PW=1
µS, DF=1%
10
10.5
dB
η
c
Collector Efficiency
Vcc = 50V, F = 1030MHz,
Pout=1000W Peak Min, PW=1
µS, DF=1%
45
50
%
tr
Rise Time
Vcc = 50V, F = 1030MHz,
Pout=1000W Peak Min, PW=1
µS, DF=1%
50
80
nS
VSWR
Output Load Mismatch
Vcc = 50V, F = 1030MHz,
Pout=1000W Peak Min, PW=1
µS, DF=1%
4:1
Ψ
Zin
Series Input Impedance (Circuit
source impedance @ test cond.)
Vcc = 50V, F = 1030MHz,
Pout=1000W Peak Min, PW=1
µS, DF=1%
0.89 – j2.3
Ω
Zout
Series Output Impedance (Circuit
load impedance @ test cond.)
Vcc = 50V, F = 1030MHz,
Pout=1000W Peak Min, PW=1
µS, DF=1%
0.54 - j2.64
Ω
1 At rated output power and pulse conditions
2 Not measurable due to EB Returns
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