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TVB200SA Datasheet(PDF) 2 Page - Tyco Electronics |
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TVB200SA Datasheet(HTML) 2 Page - Tyco Electronics |
2 / 2 page Tyco/Electronics Raychem Corporation 308 Constitution Drive Menlo Park, CA 94025 800-227-4856 FAX 800-227-4866 PolySwitch® SiBar Thyristor Surge Protectors PRODUCT: TVB200SA DOCUMENT: 24304 PCN: 732781 REV LETTER: B REV DATE: AUGUST 16, 2001 PAGE NO.: 2 OF 2 DEVICE RATINGS @ 25º C (Both Polarities) Parameter Symbol Value Units Off-State Voltage, Maximum at ID = 5 µA VDM 200 V Non-Repetitive Peak Impulse Current 10x1000 µsec Double exponential waveform (Notes 1 and 2) 10/560 µsec 10/160 µsec IPP1 IPP2 IPP3 50 70 100 A A A Critical Rate of Rise of On-State Current Maximum 2x10 µsec waveform, VOC=2.5kV, ISC=500A peak di/dt 150 A/µs DEVICE THERMAL RATINGS Storage Temperature Range TSTG -65 to 150 ºC Operating Temperature Range Blocking or conducting state TA -40 to 125 ºC Overload Junction Temperature Maximum; Conducting state only TJ +175 ºC ELECTRICAL CHARACTERISTICS Both polarities (TJ @ 25ºC unless otherwise noted) Characteristics Symbol Min Typ Max Units Breakover Voltage (+25ºC) dV/dt = 100V/µsec, ISC=1.0A, VDC = 1000V VBO ---- 260 320 V Breakover Voltage (+25ºC) f=60Hz, ISC=1.0Arms, VOC = 1000Vrms, R=1.0 k Ω, t = 0.5 cycle (Note 2) VBO ---- 260 320 V Breakover Voltage Temperature Coefficient dVBO/dTJ ---- 0.08 ----- %/ºC Off-State Current (VD1= 50V) (VD2= VDM) ID1 ID2 ---- ---- ----- ----- 2.0 5.0 µA µA On-State Voltage (IT=1A) PW ≤ 300 µsec, Duty Cycle ≤ 2% (Note 2) VT ---- ----- 5.0 V Breakover Current IBO ---- 230 ----- mA Holding Current (Note 2) IH 175 350 ---- mA Critical Rate of Rise of Off-State Voltage (Linear waveform, VD = 0.8 X Rated VBO, TJ= +25ºC) dv/dt 2000 ---- ---- V/µs Capacitance (f=1.0 Mhz, 50VDC bias, 1 Vrms) (f=1.0 Mhz, 2VDCbias, 15mVrms) C1 C2 ---- ---- 20 50 ---- pF pF Note 1. Allow cooling before test second polarity Note 2. Measured under pulse conditions to reduce heating VOLTAGE-CURRENT CHARACTERISTIC |
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