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SHD225623 Datasheet(PDF) 1 Page - Sensitron

Part No. SHD225623
Description  HERMETIC POWER MOSFET N-CHANNEL ULTRA LOW RDS(ON)
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Manufacturer  SENSITRON [Sensitron]
Direct Link  http://www.sensitron.com
Logo SENSITRON - Sensitron

SHD225623 Datasheet(HTML) 1 Page - Sensitron

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221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - www.sensitron.com E-Mail Address - sales@sensitron.com
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4144, REV. -
HERMETIC POWER MOSFET
N-CHANNEL ULTRA LOW RDS(ON)
FEATURES:
œ 200 Volt, 0.03 Ohm, 90A MOSFET
œ Isolated Hermetic Metal Package
œ Fast Switching
œ Ultra Low R
DS (on)
MAXIMUM RATINGS
ALL RATINGS ARE AT T
C = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL
MIN.
TYP.
MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
–30
Volts
ON-STATE DRAIN CURRENT
ID
-
-
90
Amps
PULSED DRAIN CURRENT
IDM
-
-
380
Amps
OPERATING AND STORAGE TEMPERATURE
TJ/TSTG
-55
-
+150
•C
TOTAL DEVICE DISSIPATION
PD
-
-
150
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 0.25 mA
BVDSS
200
-
-
Volts
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 56A
RDS(ON)
-
-
0.03
W
GATE THRESHOLD VOLTAGE
VDS = VGS, ID = 0.25mA
VGS(th)
3
-
5
Volts
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8 x Max. rating, VGS = 0V, TJ = 25
•C
TJ = 125
•C
IDSS
-
-
25
250
mA
GATE TO SOURCE LEAKAGE FORWARD
VGS = 30V
GATE TO SOURCE LEAKAGE REVERSE
VGS = -30V
IGSS
-
-
100
-100
nA
TURN ON DELAY TIME
VDD = 100V,
RISE TIME
ID = 56A
TURN OFF DELAY TIME
VGS=10V
FALL TIME
RG = 1.2
W
td(ON)
tr
td(OFF)
tf
-
23
160
43
79
-
nsec
DIODE FORWARD VOLTAGE
IS = 56A, VGS = 0V
Pulse test, t
ˆ 300 ms, duty cycle d ˆ 2 %
VSD
-
-
1.5
Volts
REVERSE RECOVERY TIME
TJ = 25
•C,
IF=56A, di/dt = 100A/
msec
trr
-
230
340
nsec
INPUT CAPACITANCE
VGS = 0 V
OUTPUT CAPACITANCE
VDS = 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
Ciss
Coss
Crss
-
6040
1070
170
-
pF
THERMAL RESISTANCE, JUNCTION TO CASE
RthJC
-
-
1
•C/W
SHD225623


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