TPC8009-H datasheet(5/7 Pages) TOSHIBA

Part #	TPC8009-H

Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)

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Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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5 / 7 page

TPC8009-H

2002-01-17

5

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain-source voltage VDS (V)

IDR – VDS

Drain-source voltage VDS (V)

Capacitance – VDS

Ambient temperature Ta (°C)

Vth – Ta

Ambient temperature Ta (°C)

PD – Ta

Total gate charge Qg (nC)

Dynamic Input/Output Characteristics

0.1

1

10

100

10

100

1000

10000

Crss

Coss

Ciss

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

0

1.5

2.5

-80

-40

0

40

80

160

120

0.5

2

1

Common source

VDS = 10 V

ID = 1 mA

Pulse test

-80

-40

0

40

80

160

120

ID = 13、6.5、3.5 A

10

VGS = 4.5 V

ID = 13、6.5、3.5 A

0

4

8

14

18

2

6

10

12

16

Common source

Pulse test

0.1

1

10

0

-0.4

-0.6

-0.8

-1

-0.2

100

3

1

5

10

Common source

Ta

= 25°C

Pulse test

VGS = 0 V

0

0.4

0.8

1.2

1.6

2

50

100

150

200

(1) Device mounted on a

glass-epoxy board (a)

(Note 2a)

(2) Device mounted on a

glass-epoxy board (b)

(Note 2b)

t

= 10 s

(1)

(2)

12

6

0

5

510

15

10

20

30

0

4

8

12

10

Common source Ta

= 25°C

ID = 13 A Pulse test

VGS

20

25

30

15

25

6

2

VDS

VDD = 24 V

6

12

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TPC8009-H Datasheet(PDF) 5 Page - Toshiba Semiconductor

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