1

Composite Transistors

XP8081

Silicon N-channel junction FET (Tr1)

Silicon NPN epitaxial planer transistor (Tr2)

For analog switching (Tr1)/switching (Tr2)

q

Two elements incorporated into one package.

q

Reduction of the mounting area and assembly cost by one half.

q

2SK1103+UN1213 (transistors with built-in resistor)

Unit: mm

Marking Symbol:

9Z

Internal Connection

Parameter

Symbol

Ratings

Unit

Gate to drain voltage

–50

V

Drain current

20

mA

Gate current

10

mA

Collector to base voltage

50

V

Collector to emitter voltage

50

V

Collector current

100

mA

Total power dissipation

150

mW

Junction temperature

150

˚C

Storage temperature

–55 to +150

˚C

Tr1

Overall

Tr2

1 : Drain (Tr1)

4 : Emitter (Tr2)

2 : Source (Tr1)

5 : Base (Tr2)

3 : Collector (Tr2) 6 : Gate (Tr1)

EIAJ : SC–88

S–Mini Type Package (6–pin)

2.1

±0.1

1.25

±0.1

0.425

0.425

1

2

3

6

5

4

0.2

±0.1

1

Tr2

Tr1

2

34

6

5