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XP8081 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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XP8081 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 4 page 1 Composite Transistors XP8081 Silicon N-channel junction FET (Tr1) Silicon NPN epitaxial planer transistor (Tr2) For analog switching (Tr1)/switching (Tr2) s Features q Two elements incorporated into one package. q Reduction of the mounting area and assembly cost by one half. s Basic Part Number of Element q 2SK1103+UN1213 (transistors with built-in resistor) s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: 9Z Internal Connection Parameter Symbol Ratings Unit Gate to drain voltage VGDS –50 V Drain current ID 20 mA Gate current IG 10 mA Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Tr1 Overall Tr2 1 : Drain (Tr1) 4 : Emitter (Tr2) 2 : Source (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Gate (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) 2.1 ±0.1 1.25 ±0.1 0.425 0.425 1 2 3 6 5 4 0.2 ±0.1 1 Tr2 Tr1 2 34 6 5 |
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