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TBB1004 Datasheet(PDF) 2 Page - Hitachi Semiconductor

Part No. TBB1004
Description  Twin Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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TBB1004 Datasheet(HTML) 2 Page - Hitachi Semiconductor

 
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TBB1004
2
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
6V
Gate1 to source voltage
V
G1S
+6
-0
V
Gate2 to source voltage
V
G2S
+6
-0
V
Drain current
I
D
30
mA
Channel power dissipation
Pch
*3
250
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 3. Value on the glass epoxy board (49mm
× 38mm × 1mm).
Electrical Characteristics (Ta = 25°C)
The below specification are applicable for UHF unit (FET1)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
6
——V
I
D = 200µA, VG1S = VG2S = 0
Gate1 to source breakdown
voltage
V
(BR)G1SS
+6
——V
I
G1 = +10 µA, VG2S = VDS = 0
Gate2 to source breakdown
voltage
V
(BR)G2SS
+6
——V
I
G2 = +10 µA, VG1S = VDS = 0
Gate1 to source cutoff current
I
G1SS
+100
nA
V
G1S = +5V, VG2S = VDS = 0
Gate2 to source cutoff current
I
G2SS
+100
nA
V
G2S = +5V, VG1S = VDS = 0
Gate1 to source cutoff voltage V
G1S(off)
0.5
0.7
1.0
V
V
DS = 5V, VG2S = 4V, ID = 100µA
Gate2 to source cutoff voltage V
G2S(off)
0.5
0.7
1.0
V
V
DS = 5V, VG1S = 5V, ID = 100µA
Drain current
I
D(op)
13
17
21
mA
V
DS = 5V, VG1 = 5V
V
G2S = 4V, RG = 100kΩ
Forward transfer admittance
|y
fs|
212631mS
V
DS = 5V, VG1 = 5V, VG2S =4V
R
G = 100kΩ, f = 1kHz
Input capacitance
c
iss
1.4
1.8
2.2
pF
V
DS = 5V, VG1 = 5V
Output capacitance
c
oss
1.0
1.4
1.8
pF
V
G2S =4V, RG = 100kΩ
Reverse transfer capacitance
c
rss
0.02
0.04
pF
f = 1MHz
Power gain
PG
16
21
dB
V
DS = VG1 = 5V, VG2S = 4V
R
G = 100kΩ, f = 900MHz
Zi=S11*, Zo=S22*(:PG)
Noise figure
NF
1.7
2.5
dB
Zi=S11opt (:NF)


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