SENSITRON
SHD118536
SHD118536A
SHD118536B
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4604, REV. -
HERMETIC SCHOTTKY RECTIFIER
Low Forward Voltage Drop
Features:
•
Soft Reverse Recovery at Low and High Temperature
•
Low Forward Voltage Drop
•
Low Power Loss, High Efficiency
•
High Surge Capacity
•
Guard Ring for Enhanced Durability and Long Term Reliability
•
Guaranteed Reverse Avalanche Characteristics
Maximum Ratings
Characteristics
Symbol
Condition
Max.
Units
Peak Inverse Voltage
VRWM
-
200
V
Max. Average Forward Current
IF(AV)
50% duty cycle, rectangular
wave form (Single)
60
A
Max. Average Forward Current
IF(AV)
50% duty cycle, rectangular
wave form (Common Cathode)
120
A
Max. Peak One Cycle Non-
Repetitive Surge Current
IFSM
8.3 ms, half Sine wave
(per leg)
860
A
Non-Repetitive Avalanche Energy
EAS
TJ = 25 °C, IAS = 3.0 A,
L = 4.4 mH (per leg)
20
mJ
Repetitive Avalanche Current
IAR
IAS decay linearly to 0 in 1 µs
ƒ limited by T
J max VA=1.5VR
3.0
A
Maximum Thermal Resistance
RθJC
DC operation
0.18
°C/W
Max. Junction Temperature
TJ
-
-65 to +200
°C
Max. Storage Temperature
Tstg
-
-65 to +200
°C
Electrical Characteristics
Characteristics
Symbol
Condition
Max.
Units
Max. Forward Voltage Drop
VF1
@ 60A, Pulse, TJ = 25 °C
0.95
V
(per leg)
VF2
@ 60A, Pulse, TJ = 125 °C
0.79
V
Max. Reverse Current
IR1
@VR = 200V, Pulse,
TJ = 25 °C
0.045
mA
(per leg)
IR2
@VR = 200V, Pulse,
TJ = 125 °C
3.0
mA
Max. Junction Capacitance
(per leg)
CT
@VR = 5V, TC = 25 °C
fSIG = 1MHz,
VSIG = 50mV (p-p)
900
pF
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