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MRF286 Datasheet(PDF) 2 Page - Motorola, Inc

Part No. MRF286
Description  The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
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Manufacturer  MOTOROLA [Motorola, Inc]
Direct Link  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF286 Datasheet(HTML) 2 Page - Motorola, Inc

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MRF286 MRF286S
2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 20 µAdc)
V(BR)DSS
65
Vdc
Gate–Source Leakage Current
(VGS = 20 Vdc, VDS = 0 Vdc)
IGSS
1
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0)
IDSS
10
µAdc
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
3
S
Gate Threshold Voltage
(VDS = 10 V, ID = 300 µA)
VGS(th)
2
3.2
4
Vdc
Gate Quiescent Voltage
(VDS = 26 V, ID = 500 mA)
VGS(Q)
3
4.15
5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 1 A)
VDS(on)
0.16
0.6
Vdc
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
3
pF
Input Capacitance(1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Ciss
145
pF
Output Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss
51
pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
Gps
9.5
10.5
dB
Drain Efficiency
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
η
28
32
%
Intermodulation Distortion
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IMD
30
–28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f1 = 2000.0 MHz, f2 = 2000.1 MHz)
IRL
–12
–9
dB
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 2 GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
(1) Part is internally matched both on input and output.


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