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MRF286 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MRF286
Description  The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

MRF286 Datasheet(HTML) 1 Page - Motorola, Inc

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MRF286 MRF286S
MOTOROLA RF DEVICE DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1000 to 2400 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier
applications. To be used in class A and class AB for PCN–PCS/cellular radio
and WLL applications.
• Specified Two–Tone Performance @ 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 9.5 dB
Intermodulation Distortion — –28 dBc
• Typical Two–Tone Performance at 2000 MHz, 26 Volts
Output Power — 60 Watts (PEP)
Power Gain — 10.5 dB
Efficiency — 32%
Intermodulation Distortion — –30 dBc
• S–Parameter Characterization at High Bias Levels
• Capable of Handling 10:1 VSWR, @ 26 Vdc,
2000 MHz, 60 Watts (CW) Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
240
1.37
Watts
W/
°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
θJC
0.73
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
“PILOT PRODUCTION PROTOTYPE (“X” Status)” devices are preproduction products and may not be released or produced in volume.
“X” status devices are for engineering evaluation and should not be used for production. Specifications are subject to change without notice.
Order this document
from WISD RF Marketing
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRF286
MRF286S
2000 MHz, 60 W, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–04, STYLE 1
(MRF286)
CASE 465A–04, STYLE 1
(MRF286S)
Order sample parts by XRF286,S
PILOT PRODUCTION PROTOTYPE
© Motorola, Inc. 2000
REV 3


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