IXTQ62N15P datasheet(1/5 Pages) IXYS

Part #	IXTQ62N15P

Description	PolarHT Power MOSFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

° C to 175° C

150

V

DGR

T

J

= 25

° C to 175° C; R

GS = 1 MΩ

150

V

GS

Continuous

±20

V

GSM

Transient

±30

V

I

D25

T

C = 25° C62

A

I

DM

T

C = 25° C, pulse width limited by TJM

150

A

I

AR

T

C = 25° C50

A

E

AR

T

C = 25° C30

mJ

E

AS

T

C = 25° C

1.0

J

dv/dt

I

S

≤I

DM, di/dt ≤100 A/µs, VDD ≤VDSS,

10

V/ns

T

J

≤150° C, R

G = 10 Ω

P

D

T

C = 25° C

350

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +150

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 s

2600

° C

Md

Mounting torque

(TO-3P / TO-220)

1.13/10 Nm/lb.in.

Weight

TO-3P

5.5

g

TO-220

4

g

TO-263

3

g

G = Gate

D = Drain

S = Source

TAB = Drain

DS99154E(12/05)

Symbol

Test Conditions

Characteristic Values

(T

J = 25° C, unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0 V, ID = 250 µA

150

V

GS(th)

V

DS = VGS, ID = 250µA

3.0

5.5

V

I

GSS

V

GS = ±20 VDC, VDS = 0

±100

nA

I

DSS

V

DS = VDSS

25

µA

V

GS = 0 V

T

J = 150° C

250

µA

R

DS(on)

V

GS = 10 V, ID = 0.5 ID25

33

40

m

Ω

Pulse test, t

≤300 µs, duty cycle d ≤ 2 %

PolarHTTM

Power MOSFET

IXTA 62N15P

IXTP 62N15P

IXTQ 62N15P

N-Channel Enhancement Mode

Avalanche Rated

Features

l International standard packages

l Unclamped Inductive Switching (UIS)

rated

l Low package inductance

- easy to drive and to protect

Advantages

l

Easy to mount

l

Space savings

l

High power density

TO-220 (IXTP)

TO-263 (IXTA)

TO-3P (IXTQ)

G

D

S

(TAB)

D

(TAB)

G

S

G

S

(TAB)

V

DSS

= 150 V

I

D25

=

62 A

R

DS(on) ≤

≤≤≤≤

40 m

Ω

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