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CFK2062-P5 Datasheet(PDF) 2 Page - Mimix Broadband

Part # CFK2062-P5
Description  2.3 to 2.5 GHz 30 dBm Power GaAs FET
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Manufacturer  MIMIX [Mimix Broadband]
Direct Link  http://www.mimixbroadband.com
Logo MIMIX - Mimix Broadband

CFK2062-P5 Datasheet(HTML) 2 Page - Mimix Broadband

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3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
CFK2062-P5
Features
t High Gain
t +30 dBm Power Output
t Proprietary Power FET Process
t >40% Linear Power Added Efficiency
t Surface Mount SO-8 Power Package
Applications
t ISM Band Base Stations and Terminals
t RF ID/POS Base Stations
t Wireless Local Loop
Description
The CFK2062-P5 is a high-gain FET intended for dri-
ver amplifier applications in high-power systems, and output
stage usage in medium power applications at power levels up to
+30 dBm. The device is easily matched and provides excellent
linearity at 1 Watt. Manufactured in Celeritek’s proprietary
power FET process, this device is assembled in an industry
standard surface mount SO-8 power package that is compatible
with high volume, automated board assembly techniques.
2.3 to 2.5 GHz
+30 dBm Power GaAs FET
Product Specifications
July 1997
(1 of 4)
1
3
4
7
8
6
5
2
G
G
D
D
Back Plane
is Source
GND
GND
GND
GND
Package Diagram
Absolute Maximum Ratings
Parameter
Symbol
Rating
Drain-Source Voltage
VDS
10V (3)
Gate-Source Voltage
VGS
-5V
Drain Current
IDS
Idss
Continuous Dissipation
PT
6W
Channel Temperature
TCH
175°C
Storage Temperature
TSTG
-65°C to +175°C
SO-8 Power Package Physical Dimensions
Notes:
1. Sum to two tones with 1 MHz spacing = 25 dBm.
2. See thermal considerations information on page 4.
3. Maximum potential difference across the device (Vd + Vg) cannot
exceed 12V.
Parameters
Conditions
Min
Typ
Max
Units
Vd = 8V, Id = 400 mA (Quiescent)
P-1dB
30.0 31.0
dBm
SSG
12.0 13.0
dB
3rd Order
Products (1)
30
dBc
Efficiency
@ P1dB
40
%
Vd = 5V, Id = 600 mA (Quiescent)
P-1dB
30.5
dBm
SSG
12.0
dB
Specifications (TA = 25°C) The following specifications are
guaranteed at room temperature in Celeritek test fixture at 2.45 GHz.
Parameters
Conditions
Min
Typ
Max
Units
gm
Vds = 2.0V, Vgs = 0V
650
mS
Idss
Vds = 2.0V, Vgs = 0V
1.4
A
Vp
Vds = 3.0V, Ids = 25 mA
-1.8
Volts
BVGD
Igd = 2.5 mA
15
17
Volts
Θ
JL (2)
@150°C TCH
12
°C/W


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