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XP4216 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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XP4216 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Composite Transistors XP4216 Silicon NPN epitaxial planer transistor For switching/digital circuits s Features q Two elements incorporated into one package. (Transistors with built-in resistor) q Reduction of the mounting area and assembly cost by one half. s Basic Part Number of Element q UN1216 × 2 elements s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: 8U Internal Connection Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Collector cutoff current ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 0.01 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA 160 460 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V Output voltage low level VOL VCC = 5V, VB = 2.5V, RL = 1kΩ 0.2 V Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz Input resistance R1 –30% 4.7 +30% k Ω 1 : Emitter (Tr1) 4 : Emitter (Tr2) 2 : Base (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) 2.1 ±0.1 1.25 ±0.1 0.425 0.425 1 2 3 6 5 4 0.2 ±0.1 1 Tr2 Tr1 2 34 5 6 |
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