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G767 Datasheet(PDF) 2 Page - Global Mixed-mode Technology Inc

Part No. G767
Description  Remote/Local Temperature Sensor with SMBus Serial Interface
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Manufacturer  GMT [Global Mixed-mode Technology Inc]
Direct Link  http://www.gmt.com.tw
Logo GMT - Global Mixed-mode Technology Inc

G767 Datasheet(HTML) 2 Page - Global Mixed-mode Technology Inc

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Ver: 2.5
Dec 14, 2004
TEL: 886-3-5788833
http://www.gmt.com.tw
2
G767
Global Mixed-mode Technology Inc.
Absolute Maximum Ratings
Vcc to GND………….….……..………….-0.3V to +6V
DXP, ADD to GND……….…….…-0.3V to (Vcc + 0.3V)
DXN to GND……………..……………..-0.3V to +0.8V
SMBCLK, SMBDATA,
ALERT ,
STBY to GND…………
……………………………………………...…-0.3V to +6V
SMBDATA, ALERT Current………….-1mA to +50mA
DXN Current……………………..………………….±1mA
ESD Protection (SMBCLK, SMBDATA, ALERT ,
human body model).………………………..……..4000V
ESD Protection (other pins, human body model)..2000V
Continuous Power Dissipation (TA = +70°C)
SSOP(derate 8.30mW/°C above +70°C)……...667mW
Operating Temperature Range....……-55°C to +125°C
Junction Temperature………………….…….….+150°C
Storage temperature Range………….-65°C to +165°C
Reflow Temperature (soldering, 10sec)…………....260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the opera-
tional sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
Electrical Characteristics
(Vcc = + 3.3V, TA = 0°C to +85°C, unless otherwise noted.)
PARAMETER
CONDITIONS
MIN TYP MAX UNITS
ADC and power supply
Temperature Resolution (Note 1) Monotonicity guaranteed
8
---
---
Bits
TA = +60°C to +100°C
-2
---
2
Initial Temperature Error,
Local Diode (Note 2)
TA = 0°C to +85°C
-3
---
3
°C
TR = +60°C to +100°C
-3
---
3
Temperature Error, Remote Di-
ode (Notes 2 and 3)
TR = -55°C to +125°C
-5
---
5
°C
TA = +60°C to +100°C
-2.5
---
2.5
Temperature Error, Local Diode
(Notes 1 and 2)
Including long-term drift
TA = 0°C to +85°C
-3.5
---
3.5
°C
Supply-Voltage Range
3.0
---
5.5
V
Undervoltage Lockout Threshold Vcc input, disables A/D conversion, rising edge
2.6
2.8 2.95
V
Undervoltage Lockout Hysteresis
---
50
---
mV
Power-On Reset Threshold
Vcc , falling edge
1.0
1.7
2.5
V
POR Threshold Hysteresis
---
50
---
mV
SMBus static
---
3
10
Standby Supply Current
Logic inputs forced
to Vcc or GND
Hardware or software
standby, SMBCLK at 10kHz
---
4
---
µA
0.25 conv/sec
---
35
70
Average Operating Supply
Current
Auto-convert mode,average meas-
ured over 4sec. Logic inputs forced
to Vcc or GND
2.0 conv/sec
---
120 180
µA
Conversion Time
From stop bit to conversion complete(both channels)
94
125 156
ms
Conversion Rate Timing Error
Auto-convert mode
-25
---
25
%
High level
80
100 120
Remote-Diode Source Current
DXP forced to 1.5V
Low level
8
10
12
µA
Address Pin Bias Current
ADD0, ADD1; momentary upon power-on reset
---
160
---
µA


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