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XP05531 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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XP05531 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 2 page  1 Composite Transistors XP05531 Silicon NPN epitaxial planer transistor For high frequency, oscillation and mixing s Features q High transition frequency fT. q Small collector output capacitance Cob and reverse transfer ca- pacitance Crb. q Two elements incorporated into one package. s Basic Part Number of Element q 2SC3130 × 2 elements s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: 5M Internal Connection Parameter Symbol Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = 2mA, IB = 0 10 V Emitter to base voltage VEBO IE = 10µA, IC = 0 3 V Collector cutoff current ICBO VCB = 10V, IE = 0 1 µA ICEO VCE = 10V, IB = 0 10 µA Forward current transfer ratio hFE1 VCE = 4V, IC = 5mA 75 400 hFE2/hFE1 ratio hFE2/hFE1 VCE = 4V, IC = 100µA 0.75 1.6 VCE = 4V, IC = 5mA Collector to emitter saturation voltage VCE(sat) IC = 20mA, IB = 4mA 0.5 V Transition frequency fT VCB = 4V, IE = –5mA, f = 200MHz 1.4 1.9 2.5 GHz Collector output capacitance Cob VCB = 4V, IE = 0, f = 1MHz 0.9 1.1 pF Common base reverse transfer capacitance Crb VCB = 4V, IE = 0, f = 1MHz 0.25 0.35 pF Collector to base parameter rbb.CC VCB = 4V, IE = –5mA, f = 31.9MHz 11.8 13.5 ps 16 5 Tr2 Tr1 2 34 1 : Emitter (Tr1) 4 : Collector (Tr2) 2 : Base (Tr1) 5 : Emitter (Tr2) 3 : Base (Tr2) 6 : Collector (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) 2.1 ±0.1 1.25 ±0.1 0.425 0.425 1 2 3 6 5 4 0.2 ±0.1 |
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