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FGA15N120ANTD Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FGA15N120ANTD
Description  1200V NPT Trench IGBT
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FGA15N120ANTD Datasheet(HTML) 1 Page - Fairchild Semiconductor

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©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA15N120ANTD Rev. A
May 2006
FGA15N120ANTD
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: VCE(sat), typ = 1.9V
@ IC = 15A and TC = 25°C
• Low switching loss: Eoff, typ = 0.6mJ
@ IC = 15A and TC = 25°C
• Extremely enhanced avalanche capability
Description
Using Fairchild's proprietary trench design and advanced NPT
technology, the 1200V NPT IGBT offers superior conduction
and switching performances, high avalanche ruggedness and
easy parallel operation.
This device is well suited for the resonant or soft switching appli-
cation such as induction heating, microwave oven, etc.
G
C
E
G
C
E
G C E
TO-3P
Absolute Maximum Ratings
Symbol
Description
FGA15N120ANTD
Units
VCES
Collector-Emitter Voltage
1200
V
VGES
Gate-Emitter Voltage
± 20
V
IC
Collector Current
@ TC = 25°C
30
A
Collector Current
@ TC = 100°C
15
A
ICM
Pulsed Collector Current (Note 1)
45
A
IF
Diode Continuous Forward Current
@ TC = 100°C
15
A
IFM
Diode Maximum Forward Current
45
A
PD
Maximum Power Dissipation
@ TC = 25°C
186
W
Maximum Power Dissipation
@ TC = 100°C
74
W
TJ
Operating Junction Temperature
-55 to +150
°C
Tstg
Storage Temperature Range
-55 to +150
°C
TL
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
300
°C
Thermal Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case for IGBT
--
0.67
°C/W
RθJC
Thermal Resistance, Junction-to-Case for Diode
--
2.88
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
°C/W
Notes:
(1) Repetitive rating: Pulse width limited by max. junction temperature


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