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XP0121E Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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XP0121E Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Composite Transistors XP0121E Silicon NPN epitaxial planer transistor For switching/digital circuits s Features q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) q Reduction of the mounting area and assembly cost by one half. s Basic Part Number of Element q UN121E × 2 elements s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: AQ Internal Connection Parameter Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 50 V Collector current IC 100 mA Total power dissipation PT 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 50 V Collector to emitter voltage VCEO IC = 2mA, IB = 0 50 V Collector cutoff current ICBO VCB = 50V, IE = 0 0.1 µA ICEO VCE = 50V, IB = 0 0.5 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 0.2 mA Forward current transfer ratio hFE VCE = 10V, IC = 5mA 60 Forward current transfer hFE ratio hFE (small/large) *1 VCE = 10V, IC = 5mA 0.5 0.99 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 0.3mA 0.25 V Output voltage high level VOH VCC = 5V, VB = 0.5V, RL = 1kΩ 4.9 V Output voltage low level VOL VCC = 5V, VB = 6V, RL = 1kΩ 0.2 V Input resistance R1 –30% 47 +30% k Ω Resistance ratio R1/R2 2.14 Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz 150 MHz *1 Ratio between 2 elements 1 : Base (Tr1) 4 : Collector (Tr2) 2 : Emitter 5 : Collector (Tr1) 3 : Base (Tr2) EIAJ : SC–88A S–Mini Type Package (5–pin) 2.1 ±0.1 0.425 1.25 ±0.1 1 2 3 4 5 0.2 ±0.1 0.425 15 Tr2 Tr1 2 34 |
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