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XN6113 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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XN6113 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 2 page 1 Composite Transistors XN6113 Silicon PNP epitaxial planer transistor For switching/digital circuits s Features q Two elements incorporated into one package. (Transistors with built-in resistor) q Reduction of the mounting area and assembly cost by one half. s Basic Part Number of Element q UN1113 × 2 elements s Absolute Maximum Ratings (Ta=25˚C) Unit: mm Marking Symbol: 6W Internal Connection Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V Collector to emitter voltage VCEO –50 V Collector current IC –100 mA Total power dissipation PT 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –50 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Collector cutoff current ICBO VCB = –50V, IE = 0 – 0.1 µA ICEO VCE = –50V, IB = 0 – 0.5 µA Emitter cutoff current IEBO VEB = –6V, IC = 0 – 0.1 mA Forward current transfer ratio hFE VCE = –10V, IC = –5mA 80 Forward current transfer hFE ratio hFE (small/large) *1 VCE = –10V, IC = –5mA 0.5 0.99 Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = – 0.3mA – 0.25 V Output voltage high level VOH VCC = –5V, VB = – 0.5V, RL = 1kΩ –4.9 V Output voltage low level VOL VCC = –5V, VB = –3.5V, RL = 1kΩ – 0.2 V Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Input resistance R1 –30% 47 +30% k Ω Resistance ratio R1/R2 0.8 1.0 1.2 *1 Ratio between 2 elements 1 : Collector (Tr1) 4 : Base (Tr2) 2 : Base (Tr1) 5 : Emitter (Tr2) 3 : Collector (Tr2) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) 2.8 +0.2 –0.3 1.5 0.65 ±0.15 0.65 ±0.15 1 6 5 4 3 2 +0.25 –0.05 0.4 ±0.2 0.1 to 0.3 6 Tr2 Tr1 5 43 2 1 |
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