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ABA-32563 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part No. ABA-32563
Description  2.5 GHz Broadband Silicon RFIC Amplifier
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Maker  HP [Agilent(Hewlett-Packard)]
Homepage  http://www.home.agilent.com
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ABA-32563 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

   
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ABA-32563 Absolute Maximum Ratings[1]
Symbol
Parameter
Units
Absolute Max.
V
cc
Device Voltage, RF output to ground (T = 25
°C)
V
6
P
in
CW RF Input Power (Vcc = 3V)
dBm
15
Pdiss
Total Power Dissipation[3]
W
0.6
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using 150
°C
Liquid Crystal Measurement Technique.
3. Board (package belly) temperature, Tc, is
25
°C. Derate 8.1 mW/°C for Tc> 120.8°C.
Electrical Specifications
T
c = +25°C, Zo = 50 Ω, Pin = -30 dBm, Vcc = 3V, Freq = 2 GHz, unless stated otherwise.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Std Dev.
Gp[1]
Power Gain (|S
21|
2)
dB
17.5
19.0
∆Gp
Power Gain Flatness,
f = 0.1 ~ 1.5 GHz
dB
1.0
f = 0.1 ~ 2.5 GHz
3.0
NF[1]
Noise Figure
dB
3.5
4.4
P1dB[1]
Output Power at 1dB Gain Compression
dBm
8.4
OIP3[1]
Output Third Order Intercept Point
dBm
19.5
VSWRin
[1]
Input VSWR
<1.5
VSWR
out
[1]
Output VSWR
<1.5
Icc[1]
Device Current
mA
37
42.5
Td[1]
Group Delay
ps
140
Notes:
1. Measurements taken on 50
Ω test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard
deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values
anywhere within the upper and lower spec limits.
Figure 1. ABA-32563 Production Test Circuit.
Thermal Resistance[2] (Vcc = 3V)
θ
j-c = 124.3°C/W
RF Outp
F Input
Vcc
Cbypass
100 pF
Cbypass
1000 pF
RFC
33 nH
Cblock
1 nF
Cblock
1 nF


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