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XN4213 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # XN4213
Description  Silicon NPN epitaxial planer transistor
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

XN4213 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Composite Transistors
XN4213
Silicon NPN epitaxial planer transistor
For switching/digital circuits
s Features
q
Two elements incorporated into one package.
(Transistors with built-in resistor)
q
Reduction of the mounting area and assembly cost by one half.
s Basic Part Number of Element
q
UN1213
× 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
1 : Collector (Tr1)
4 : Collector (Tr2)
2 : Base (Tr2)
5 : Base (Tr1)
3 : Emitter (Tr2)
6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Unit: mm
Marking Symbol:
8S
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage
VCEO
50
V
Collector current
IC
100
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
Rating
of
element
Overall
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = 10µA, IE = 0
50
V
Collector to emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
Collector cutoff current
ICBO
VCB = 50V, IE = 0
0.1
µA
ICEO
VCE = 50V, IB = 0
0.5
µA
Emitter cutoff current
IEBO
VEB = 6V, IC = 0
0.1
mA
Forward current transfer ratio
hFE
VCE = 10V, IC = 5mA
80
Collector to emitter saturation voltage
VCE(sat)
IC = 10mA, IB = 0.3mA
0.25
V
Output voltage high level
VOH
VCC = 5V, VB = 0.5V, RL = 1kΩ
4.9
V
Output voltage low level
VOL
VCC = 5V, VB = 3.5V, RL = 1kΩ
0.2
V
Transition frequency
fT
VCB = 10V, IE = –2mA, f = 200MHz
150
MHz
Input resistance
R1
–30%
47
+30%
k
Resistance ratio
R1/R2
0.8
1.0
1.2
2.8
+0.2
–0.3
1.5
0.65
±0.15
0.65
±0.15
1
6
5
4
3
2
+0.25
–0.05
0.4
±0.2
0.1 to 0.3
6
Tr2
Tr1
5
43
2
1


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