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XN01401 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part # XN01401
Description  Silicon PNP epitaxial planer transistor
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

XN01401 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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1
Composite Transistors
XN1401
Silicon PNP epitaxial planer transistor
For general amplification
s Features
q
Two elements incorporated into one package.
(Emitter-coupled transistors)
q
Reduction of the mounting area and assembly cost by one half.
s Basic Part Number of Element
q
2SB709A
× 2 elements
s Absolute Maximum Ratings (Ta=25˚C)
1 : Collector (Tr1)
4 : Emitter
2 : Collector (Tr2)
5 : Base (Tr1)
3 : Base (Tr2)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Unit: mm
Marking Symbol:
5V
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
–60
V
Collector to emitter voltage
VCEO
–50
V
Emitter to base voltage
VEBO
–7
V
Collector current
IC
–100
mA
Peak collector current
ICP
–200
mA
Total power dissipation
PT
300
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 to +150
˚C
Rating
of
element
Overall
2.8
+0.2
-0.3
1.5
0.65
±0.15
0.65
±0.15
1
5
4
3
2
+0.25
-0.05
0.4
±0.2
0.1 to 0.3
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–60
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
Emitter to base voltage
VEBO
IE = –10µA, IC = 0
–7
V
Collector cutoff current
ICBO
VCB = –20V, IE = 0
– 0.1
µA
ICEO
VCE = –10V, IB = 0
–100
µA
Forward current transfer ratio
hFE
VCE = –10V, IC = –2mA
160
460
Forward current transfer hFE ratio
hFE (small/large)
*1
VCE = –10V, IC = –2mA
0.5
0.99
Collector to emitter saturation voltage
VCE(sat)
IC = –100mA, IB = –10mA
– 0.3
– 0.5
V
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
80
MHz
Collector output capacitance
Cob
VCB = –10V, IE = 0, f = 1MHz
2.7
pF
*1 Ratio between 2 elements
5
4
3
1
2
Tr2
Tr1


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