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XN01401 Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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XN01401 Datasheet(HTML) 1 Page - Panasonic Semiconductor |
1 / 3 page 1 Composite Transistors XN1401 Silicon PNP epitaxial planer transistor For general amplification s Features q Two elements incorporated into one package. (Emitter-coupled transistors) q Reduction of the mounting area and assembly cost by one half. s Basic Part Number of Element q 2SB709A × 2 elements s Absolute Maximum Ratings (Ta=25˚C) 1 : Collector (Tr1) 4 : Emitter 2 : Collector (Tr2) 5 : Base (Tr1) 3 : Base (Tr2) EIAJ : SC–74A Mini Type Pakage (5–pin) Unit: mm Marking Symbol: 5V Internal Connection Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –7 V Collector current IC –100 mA Peak collector current ICP –200 mA Total power dissipation PT 300 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 to +150 ˚C Rating of element Overall 2.8 +0.2 -0.3 1.5 0.65 ±0.15 0.65 ±0.15 1 5 4 3 2 +0.25 -0.05 0.4 ±0.2 0.1 to 0.3 s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 V Collector cutoff current ICBO VCB = –20V, IE = 0 – 0.1 µA ICEO VCE = –10V, IB = 0 –100 µA Forward current transfer ratio hFE VCE = –10V, IC = –2mA 160 460 Forward current transfer hFE ratio hFE (small/large) *1 VCE = –10V, IC = –2mA 0.5 0.99 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA – 0.3 – 0.5 V Transition frequency fT VCB = –10V, IE = 1mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 2.7 pF *1 Ratio between 2 elements 5 4 3 1 2 Tr2 Tr1 |
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