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FERD20S100S Datasheet(PDF) 1 Page - STMicroelectronics |
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FERD20S100S Datasheet(HTML) 1 Page - STMicroelectronics |
1 / 12 page November 2017 DocID029416 Rev 2 1/12 This is information on a product in full production. www.st.com FERD20S100S 100 V field-effect rectifier diode Datasheet - production data Features ST advanced rectifier process Stable leakage current over reverse voltage Reduced leakage current Low forward voltage drop High frequency operation ECOPACK®2 compliant component Description The device is based on a proprietary technology that achieves the best in class VF/IR trade-off for a given silicon surface. This 100 V rectifier has been optimized for use in confined casing applications where both efficiency and thermal performance matter. With a lower dependency of leakage current (IR) and forward voltage (VF) in function of temperature, the thermal runaway risk is reduced. Therefore, it can advantageously replace 100 V Schottky diodes. Table 1: Device summary Symbol Value IF(AV) 20 A VRRM 100 V VF(max.) 0.415 V IR(max.) 110 µA Tj(max.) 175 °C TO-220AB DPAK IPAK A K A K K K A A A K A K K A A A A |
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