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SI4894BDY Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI4894BDY
Description  N-Channel, 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI4894BDY Datasheet(HTML) 1 Page - Vishay Siliconix

  SI4894BDY Datasheet HTML 1Page - Vishay Siliconix  
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Specification Comparison
Vishay Siliconix
Document Number: 73277
06-Jan-05
www.vishay.com
1
Si4894BDY vs. Si4894DY
Description: N-Channel, 30-V (D-S) MOSFET
Package:
SOIC-8
Pin Out:
Identical
Part Number Replacements:
Si4894BDY-T1 Replaces Si4894DY-T1
Si4894BDY-T1—E3 (Lead (Pb)-Free version) Replaces Si4894DY-T1—E3
Summary of Performance:
The Si4894BDY is the replacement for the original Si4894DY; both parts perform identically including limits to the parametric
tables below.
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Si4894BDY
Si4894DY
Unit
Drain-Source Voltage
VDS
30
30
V
Gate-Source Voltage
VGS
"20
"20
V
Continuous Drain Current
TA = 25_C
ID
12
12.5
Continuous Drain Current
TA = 70_C
ID
9.5
10
A
Pulsed Drain Current
IDM
40
20
A
Continuous Source Current (MOSFET Diode Conduction)
IS
2.3
2.7
Power Dissipation
TA = 25_C
PD
2.5
3.0
W
Power Dissipation
TA = 70_C
PD
1.6
1.9
W
Operating Junction and Storage Temperature Range
Tj and Tstg
−55 to 150
−55 to 150
_C
Maximum Junction-to-Ambient
RthJA
50
42
_C/W
SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED)
Si4894BDY
Si4894DY
Parameter
Symbol
Min
Typ
Max
Min
Typ
Max
Unit
Static
Gate-Threshold Voltage
VGS(th)
1.0
3.0
0.8
V
Gate-Body Leakage
IGSS
"100
"100
nA
Zero Gate Voltage Drain Current
IDSS
1
1
mA
On-State Drain Current
VGS = 10 V
ID(on)
30
30
A
Drain Source On Resistance
VGS = 10 V
rDS( )
0.009
0.011
0.010
0.012
W
Drain-Source On-Resistance
VGS = 4.5 V
rDS(on)
0.013
0.018
0.015
0.018
W
Forward Transconductance
gfs
32
30
S
Diode Forward Voltage
VSD
0.76
1.1
0.7
1.1
V
Dynamic
Total Gate Charge
VGS = 10 V
Qg
25.4
38
20
30
Total Gate Charge
VGS = 5 V
Qg
13.2
20
11.5
17
nC
Gate-Source Charge
Qgs
5.3
3.0
nC
Gate-Drain Charge
Qgd
4.3
4.5
Gate Resistance
Rg
0.9
1.8
2.7
1
2.4
W
Switching
Turn-On Time
td(on)
13
20
10
20
Turn-On Time
tr
10
15
5
10
Turn Off Time
td(off)
33
50
30
60
ns
Turn-Off Time
tf
10
15
10
20
Source-Drain Reverse Recovery Time
trr
25
40
30
60
NS denotes parameter not specified in original data sheet.


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