Composite Transistors

1

XN1110

Silicon PNP epitaxial planer transistor

For switching/digital circuits

q

Two elements incorporated into one package.

(Emitter-coupled transistors with built-in resistor)

q

Reduction of the mounting area and assembly cost by one half.

q

UN1110

× 2 elements

1 : Collector (Tr1)

4 : Emitter

2 : Collector (Tr2)

5 : Base (Tr1)

3 : Base (Tr2)

EIAJ : SC–74A

Mini Type Pakage (5–pin)

Unit: mm

Marking Symbol:

AD

Internal Connection

Parameter

Symbol

Ratings

Unit

Collector to base voltage

–50

V

Collector to emitter voltage

–50

V

Collector current

–100

mA

Total power dissipation

300

mW

Junction temperature

150

˚C

Storage temperature

–55 to +150

˚C

Rating

of

element

Overall

2.8

+0.2

-0.3

1.5

0.65

±0.15

0.65

±0.15

1

5

4

3

2

+0.25

-0.05

0.4

±0.2

0.1 to 0.3

51

Tr2

Tr1

4

32

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector to base voltage

–50

V

Collector to emitter voltage

–50

V

Collector cutoff current

– 0.1

µA

– 0.5

µA

Emitter cutoff current

– 0.01

mA

Forward current transfer ratio

160

460

*1

0.5

0.99

Collector to emitter saturation voltage

– 0.25

V

Output voltage high level

–4.9

V

Output voltage low level

– 0.2

V

Transition frequency

80

MHz

Input resistance

–30%

47

+30%

k

Ω