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SI4569DY Datasheet(PDF) 2 Page - Vaishali Semiconductor

Part No. SI4569DY
Description  N- and P-Channel 40-V (D-S) MOSFET
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Maker  VAISH [Vaishali Semiconductor]
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SI4569DY Datasheet(HTML) 2 Page - Vaishali Semiconductor

   
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Vishay Siliconix
SPICE Device Model Si4569DY
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
Static
VDS = VGS, ID = 250 µA
N-Ch
1.2
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 µA
P-Ch
1.8
V
VDS = 5 V, VGS = 10 V
N-Ch
224
On-State Drain Current
a
ID(on)
VDS = −5 V, VGS = −10 V
P-Ch
205
A
VGS = 10 V, ID = 6 A
N-Ch
0.021
0.022
VGS = −10 V, ID = −6 A
P-Ch
0.023
0.026
VGS = 4.5 V, ID = 4.8 A
N-Ch
0.026
0.024
Drain-Source On-State Resistance
a
rDS(on)
VGS = −4.5 V, ID = −4.9 A
P-Ch
0.031
0.031
VDS = 15 V, ID = 6 A
N-Ch
17
20
Forward Transconductance
a
gfs
VDS = −15 V, ID = −6 A
P-Ch
37
17
S
IS = 1.5 A
N-Ch
0.80
0.73
Diode Forward Voltage
a
VSD
IS = −1.6 A
P-Ch
0.80
−0.73
V
Dynamic
b
VDS = 20 V, VGS = 10 V, ID = 5 A
N-Ch
17
21
VDS = −20 V, VGS = −10 V, ID = −5 A
P-Ch
34
41
N-Ch
8.8
9.6
Total Gate Charge
Qg
P-Ch
20
21
N-Ch
2.3
2.3
Gate-Source Charge
Qgs
P-Ch
4.5
4.5
N-Ch
3.2
3.2
Gate-Source Charge
Qgs
N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 5 A
P-Channel
VDS = −20 V, VGS = −4.5 V, ID = −5 A
P-Ch
9.2
9.2
nC
Notes
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
www.vishay.com
Document Number: 74183
S-60744
Rev. A, 08-May-06


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