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SI4567DY Datasheet(PDF) 2 Page - Vaishali Semiconductor

Part No. SI4567DY
Description  Dual N- and P-Channel 40-V (D-S) MOSFET
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Maker  VAISH [Vaishali Semiconductor]
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SI4567DY Datasheet(HTML) 2 Page - Vaishali Semiconductor

   
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Vishay Siliconix
SPICE Device Model Si4567DY
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Simulated
Data
Measured
Data
Unit
Static
VDS = VGS, ID = 250 µA
N-Ch
1.4
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 µA
P-Ch
1.9
V
VDS = 5 V, VGS = 10 V
N-Ch
97
On-State Drain Current
a
ID(on)
VDS = −5 V, VGS = −10 V
P-Ch
67
A
VGS = 10 V, ID = 4.1 A
N-Ch
0.049
0.048
VGS = −10 V, ID = −3.6 A
P-Ch
0.056
0.058
VGS = 4.5 V, ID = 3.8 A
N-Ch
0.056
0.056
Drain-Source On-State Resistance
a
rDS(on)
VGS = −4.5 V, ID = −2.9 A
P-Ch
0.097
0.097
VDS = 15 V, ID = 4.1 A
N-Ch
9
15
Forward Transconductance
a
gfs
VDS = −15 V, ID = −3.6 A
P-Ch
6.3
7
S
IS = 1.5 A, VGS = 0 V
N-Ch
0.72
0.80
Diode Forward Voltage
a
VSD
IS = −1.6 A, VGS = 0 V
P-Ch
0.80
−0.80
V
Dynamic
b
N-Ch
471
355
Input Capacitance
CISS
P-Ch
567
480
N-Ch
53
50
Output Capacitance
COSS
P-Ch
76
80
N-Ch
25
29
Reverse Transfer Capacitance
CRSS
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = − 20 V, VGS = 0 V, f = 1 MHz
P-CH
57
56
pF
VDS = 20 V, VGS = 10 V, ID = 5 A
N-Ch
6.5
8
VDS = − 20 V, VGS = −10 V, ID = − 5 A
P-Ch
10.5
12
N-Ch
3.3
3.7
Total Gate Charge
Qg
P-Ch
5.7
6
N-Ch
1.1
1.1
Gate-Source Charge
Qgs
P-Ch
1.5
1.5
N-Ch
1.4
1.4
Gate-Source Charge
Qgs
N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 5 A
P-Channel
VDS = − 20 V, VGS = −4.5 V, ID = − 5 A
P-Ch
2.7
2.7
nC
Notes
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
2
www.vishay.com
Document Number: 74147
S-60243
Rev. A, 20-Feb-06


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