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UN4111 Datasheet(PDF) 2 Page - Panasonic Semiconductor

Part No. UN4111
Description  Silicon PNP epitaxial planer transistor
Download  13 Pages
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Maker  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
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UN4111 Datasheet(HTML) 2 Page - Panasonic Semiconductor

 
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Transistors with built-in Resistor
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = –50V, IE = 0
– 0.1
µA
ICEO
VCE = –50V, IB = 0
– 0.5
µA
UN4111
– 0.5
UN4112/4114/411E/411D
– 0.2
UN4113
– 0.1
UN4115/4116/4117/4110
IEBO
VEB = –6V, IC = 0
– 0.01
mA
UN411F/411H
–1.0
UN4119
–1.5
UN4118/411L
–2.0
Collector to base voltage
VCBO
IC = –10µA, IE = 0
–50
V
Collector to emitter voltage
VCEO
IC = –2mA, IB = 0
–50
V
UN4111
35
UN4112/411E
60
UN4113/4114
hFE
VCE = –10V, IC = –5mA
80
UN4115*/4116*/4117*/4110*
160
460
UN411F/411D/4119/411H
30
UN4118/411L
20
Collector to emitter saturation voltage
VCE(sat)
IC = –10mA, IB = – 0.3mA
– 0.25
V
Output voltage high level
VOH
VCC = –5V, VB = – 0.5V, RL = 1kΩ
–4.9
V
Output voltage low level
VCC = –5V, VB = –2.5V, RL = 1kΩ
– 0.2
UN4113
VOL
VCC = –5V, VB = –3.5V, RL = 1kΩ
– 0.2
V
UN411D
VCC = –5V, VB = –10V, RL = 1kΩ
– 0.2
UN411E
VCC = 5V, VB = –6V, RL = 1kΩ
– 0.2
Transition frequency
fT
VCB = –10V, IE = 1mA, f = 200MHz
80
MHz
UN4111/4114/4115
10
UN4112/4117
22
UN4113/4110/411D/411E
47
UN4116/411F/411L
R1
(–30%)
4.7
(+30%)
k
UN4118
0.51
UN4119
1
UN411H
2.2
UN4111/4112/4113/411L
0.8
1.0
1.2
UN4114
0.17
0.21
0.25
UN4118/4119
0.08
0.1
0.12
UN411D
R1/R2
3.7
4.7
5.7
UN411E
1.7
2.14
2.6
UN411F
0.37
0.47
0.57
UN411H
0.17
0.22
0.27
Emitter
cutoff
current
Forward
current
transfer
ratio
Input
resis-
tance
Resis-
tance
ratio
* hFE rank classification (UN4115/4116/4117/4110)
Rank
Q
R
S
hFE
160 to 260
210 to 340
290 to 460
UN4111/4112/4113/4114/4115/4116/4117/4118/
4119/4110/411D/411E/411F/411H/411L


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