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IRIS-A6151 Datasheet(PDF) 3 Page - International Rectifier |
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IRIS-A6151 Datasheet(HTML) 3 Page - International Rectifier |
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3 / 7 page  www.irf.com 3 Electrical Characteristics (for Control IC) Electrical characteristics for control part (Ta=25℃, Vin=20V,unless otherwise specified) MIN TYP MAX VCC(ON) Operation start voltage 16 17.5 19.2 V VCC=0→19.2V VCC(OFF) Operation stop voltage 9 10 11 V VCC=19.2→9.V ICC(ON) Circuit current in operation - - 4 mA - ICC(OFF) Circuit current in non-operation - - 50 µA VCC=14V VCC(bias) Auto bias threshold voltage 9.6 10.6 11.6 V VCC=20→9.6V - Vcc(bias) - Vcc(OFF) 0.2 - - V - TOFF(MAX) Maximum OFF time 7.3 8 8.7 µsec - VOCP O.C.P. threshold voltage 0.69 0.77 0.86 V - Tbw Leading edge blanking time 200 320 480 nsec - Vburst Burst threshold voltage 0.7 0.79 0.88 V - VOLP O.L.P. threshold voltage 6.5 7.2 7.9 V - IOLP Out-flow current at O.L.P operation 18 26 35 µA - IFB(MAX) Maximum F.B. current 227 300 388 µA - ISTARTUP Startup current 340 790 1230 µA VCC=15V ISTART(leak) Startup circuit leakage current - - 30 µA - VCC(OVP) O.V.P operation voltage 28.7 31.2 34.1 V VCC=0→34.1V VCC(La.OFF) Latch circuit release voltage *6 6.6 7.3 8 V VCC=34.1→6.6V Tj(TSD) Thermal shutdown operating temperature 135 - - ℃ - Definition Symbol ICC(H) - - 200 Latch circuit sustaining current *6 Ratings VCC=34.1→8.5V Units Test Conditions µA Electrical Characteristics (for MOSFET) *6 The latch circuit means a circuit operated O.V.P and T.S.D. (Ta=25℃) unless otherwise specified MIN TYP MAX ID=300µA V1-3=0V(short) VDS =650V V1-3=0V(short) RDS(ON) On-resistance - - 4 Ω ID=0.4A tf Switching time - - 250 nsec - Between channel and internal frame Units Test Conditions Drain-to-Source breakdown voltage V Definition Symbol µA Drain leakage current IDSS - VDSS 650 - - Ratings - 300 -52 ℃/W Thermal resistance *7 θch-F - *7 Internal frame temperature (TF) is measured at the root of the Pin 3. IRIS-A6151 |
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