 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
FSX027X Datasheet(PDF) 1 Page - Eudyna Devices Inc |
|
||||||||||||||||||||||||||||||
FSX027X Datasheet(HTML) 1 Page - Eudyna Devices Inc |
|
|
1 / 4 page  1 Edition 1.2 July 1999 FEATURES • Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz • High Power Gain: G1dB=10dB(Typ.)@8.0GHz • Proven Reliability Parameter Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol V V W °C °C VGS PT TSTG TCH VDS Rating Condition Unit 12 -5 1.5 Tc = 25°C -65 to 175 175 ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with gate resistance of 1000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Noise Figure Associated Gain Symbol IDSS 70 110 150 - 100 - -0.7 - -1.2 -1.7 2.5 - -5.0 -- - 9.5 - VDS = 3V, IDS = 5.4mA VDS = 3V, IDS = 30mA f = 8GHz f = 4GHz f = 8GHz f = 12GHz f = 4GHz f = 8GHz f = 12GHz VDS = 8V, IDS = 0.7IDSS VDS = 8V, IDS = 0.7IDSS Channel to Case G.C.P.: Gain Compression Point VDS = 3V, IDS = 54mA VDS = 3V, VGS = 0V IGS = -5.4µA mA mS V dB - 24.5 - dBm 23.5 24.5 - dBm - 23.5 - dBm - 14.0 - dB 9.0 10.0 - dB - 6.5 - dB - 70 100 °C/W dB V gm Vp VGSO NF Gas Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Thermal Resistance Rth Test Conditions Unit Limit Typ. Max. Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3) The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability. DRAIN SOURCE SOURCE GATE DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FSX027X GaAs FET & HEMT Chips |
Similar Part No. - FSX027X |
|
Similar Description - FSX027X |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
allmanual.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
