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FSX027X Datasheet(PDF) 1 Page - Eudyna Devices Inc

Part # FSX027X
Description  GaAs FET & HEMT Chips
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Manufacturer  EUDYNA [Eudyna Devices Inc]
Direct Link  http://www.sei-device.com/index.asp
Logo EUDYNA - Eudyna Devices Inc

FSX027X Datasheet(HTML) 1 Page - Eudyna Devices Inc

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1
Edition 1.2
July 1999
FEATURES
• Medium Power Output: P1dB=24.5dBm(Typ.)@8.0GHz
• High Power Gain: G1dB=10dB(Typ.)@8.0GHz
• Proven Reliability
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
V
W
°C
°C
VGS
PT
TSTG
TCH
VDS
Rating
Condition
Unit
12
-5
1.5
Tc = 25°C
-65 to 175
175
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 8 volts.
2. The forward and reverse gate currents should not exceed 1.4 and -0.2 mA respectively with
gate resistance of 1000Ω.
3. The operating channel temperature (Tch) should not exceed 145°C.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
70
110
150
-
100
-
-0.7
-
-1.2
-1.7
2.5
-
-5.0
--
-
9.5
-
VDS = 3V, IDS = 5.4mA
VDS = 3V, IDS = 30mA
f = 8GHz
f = 4GHz
f = 8GHz
f = 12GHz
f = 4GHz
f = 8GHz
f = 12GHz
VDS = 8V,
IDS = 0.7IDSS
VDS = 8V,
IDS = 0.7IDSS
Channel to Case
G.C.P.: Gain Compression Point
VDS = 3V, IDS = 54mA
VDS = 3V, VGS = 0V
IGS = -5.4µA
mA
mS
V
dB
-
24.5
-
dBm
23.5
24.5
-
dBm
-
23.5
-
dBm
-
14.0
-
dB
9.0
10.0
-
dB
-
6.5
-
dB
-
70
100
°C/W
dB
V
gm
Vp
VGSO
NF
Gas
Output Power at 1 dB G.C.P.
P1dB
Power Gain at 1 dB G.C.P.
G1dB
Thermal Resistance
Rth
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Note: RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
DRAIN
SOURCE
SOURCE
GATE
DESCRIPTION
The FSX027X is a general purpose GaAs FET designed for medium
power applications up to 12GHz. These devices have a wide dynamic
range and are suitable for use in medium power, wide band, linear
drive amplifiers or oscillators.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FSX027X
GaAs FET & HEMT Chips


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