FMM5803X

27.5-31.5GHz Power Amplifier MMIC

4

For further information please contact:

FUJITSU COMPOUND SEMICONDUCTOR, INC.

2355 Zanker Rd.

San Jose, CA 95131-1138, U.S.A.

Phone: (408) 232-9500

FAX: (408) 428-9111

www.fcsi.fujitsu.com

FUJITSU MICROELECTRONICS, LTD.

Compound Semiconductor Division

Network House

Norreys Drive

Maidenhead, Berkshire SL6 4FJ

Phone:+44 (0)1628 504800

FAX:+44 (0)1628 504888

Fujitsu Limited reserves the right to change products and specifications without notice.

The information does not convey any license under rights of Fujitsu Limited or others.

© 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC.

Printed in U.S.A. FCSI0200M200

CHIP OUTLINE

Unit: µm

0

3340

VGG

VDD1

VDD2

VDD3

VDD4

VDD5

990

155

120

1030

2080

1925

RFin

RFout

970

1500

1500

2950

2950

3225

2010

1230

1230

270

2010

Chip Size: 3340±30µm x 2080±30µm

Chip Thickness: 70±20µm

Pad Dimensions: 1. DC 80µm x 80µm

2. RF 120µm x 80µm

Fujitsu Compound Semiconductor Products contain gallium arsenide

(GaAs) which can be hazardous to the human body and the environment.

For safety, observe the following procedures:

CAUTION

• Do not ingest.

• Do not alter the form of this product into a gas, powder, or liquid

through burning, crushing, or chemical processing as these by-products

are dangerous to the human body if inhaled, ingested, or swallowed.

• Observe government laws and company regulations when discarding this

product. This product must be discarded in accordance with methods

specified by applicable hazardous waste procedures.