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HY62V8100BLLR1-E Datasheet(PDF) 8 Page - Hynix Semiconductor |
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HY62V8100BLLR1-E Datasheet(HTML) 8 Page - Hynix Semiconductor |
8 / 12 page HY62V8100B Series Rev 13 / Apr. 2001 7 DATA RETENTION ELECTRIC CHARACTERISTIC TA=0 °C to 70°C / -25°C to 85°C (E) / -25¡ Éto 85¡ É(I) Sym Parameter Test Condition Min Typ Max Unit VDR Vcc for Data Retention /CS1>Vcc-0.2V or CS2<0.2V, VIN > Vcc-0.2V or VIN < Vss+0.2V 2.0 - - V ICCDR Data HY62V8100B Vcc=3.0V, - 0.5 10 uA Retention HY62V8100B-E /CS1>Vcc - 0.2V or CS2<0.2V, - 0.5 15 uA Current HY62V8100B-I VIN > Vcc-0.2V or VIN > Vss+0.2V - 0.5 15 uA tCDR Chip Deselect to Data Retention Time See Data Retention Timing Diagram 0 - - ns tR Operating Recovery Time tRC(2) - - ns Notes: 1. Typical values are under the condition of TA = 25 °C. 2. tRC is read cycle time. DATA RETENTION TIMING DIAGRAM 1 CS1 VDR CS1>VCC-0.2V tCDR tR VSS VCC 3.0V 2.2V DATA RETENTION MODE DATA RETENTION TIMING DIAGRAM 2 0.4V VDR tCDR tR VSS VCC CS2 3.0V DATA RETENTION MODE CS2<0.2V |
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