1

Edition 1.2

July 1999

FLU35XM

L-Band Medium & High Power GaAs FET

Item

Drain-Source Voltage

V

Gate-Source Voltage

V

Total Power Dissipation

Storage Temperature

Channel Temperature

W

°C

°C

Symbol

VDS

VGS

PT

Tstg

Tch

15

-5

15

-65 to +175

+175

Rating

Tc = 25°C

Condition

Unit

ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

1. The drain - source operating voltage (VDS) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 19.4 and -2.0 mA respectively with

gate resistance of 100Ω.

3. The operating channel temperature (Tch) should not exceed 145°C.

Item

Drain Current

Transconductance

Pinch-Off Voltage

Gate-Source Breakdown Voltage

Output Power at 1 dB G.C.P.

Power Gain at 1 dB G.C.P.

Power Added Efficiency

Thermal Resistance

Symbol

-

600

-

-

1200

1800

-1.0

-2.0

-3.5

-5

-

-

34.5

35.5

-

11.5

12.5

-

-

46

-

-

7.5

10

Channel to Case

G.C.P.: Gain Compression Point

f=2.0 GHz

mA

mS

V

dB

dBm

V

°C/W

%

gm

Conditions

Unit

Limits

Typ.

Max.

Min.

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

Case Style: XM

Note: The RF parameters are measured on a lot basis by sample testing

at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested.

FEATURES

• High Output Power: P1dB=35.5dBm (Typ.)

• High Gain: G1dB=12.5dB (Typ.)

• High PAE: ηadd=46% (Typ.)

• Hermetic Metal/Ceramic (SMT) Package

• Tape and Reel Available

DESCRIPTION

The FLU35XM is a GaAs FET designed for base station applications in the

PCN/PCS frequency range. This is a new product series that uses a surface

mount package that has been optimized for high volume cost driven applications.

Fujitsu’s stringent Quality Assurance Program assures the highest

reliability and consistent performance.