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FLU35XM Datasheet(PDF) 1 Page - Eudyna Devices Inc |
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FLU35XM Datasheet(HTML) 1 Page - Eudyna Devices Inc |
1 / 4 page 1 Edition 1.2 July 1999 FLU35XM L-Band Medium & High Power GaAs FET Item Drain-Source Voltage V Gate-Source Voltage V Total Power Dissipation Storage Temperature Channel Temperature W °C °C Symbol VDS VGS PT Tstg Tch 15 -5 15 -65 to +175 +175 Rating Tc = 25°C Condition Unit ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain - source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 19.4 and -2.0 mA respectively with gate resistance of 100Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. Item Drain Current Transconductance Pinch-Off Voltage Gate-Source Breakdown Voltage Output Power at 1 dB G.C.P. Power Gain at 1 dB G.C.P. Power Added Efficiency Thermal Resistance Symbol IDSS VGSO - 600 - - 1200 1800 -1.0 -2.0 -3.5 -5 - - 34.5 35.5 - 11.5 12.5 - - 46 - - 7.5 10 VDS = 5V, VGS=0V VDS = 5V, IDS=800mA VDS = 5V, IDS=60mA IGS = -60µA Channel to Case G.C.P.: Gain Compression Point VDS = 10V f=2.0 GHz IDS=0.6IDSS mA mS V dB dBm V °C/W % gm Vp P1dB G1dB ηadd Rth Conditions Unit Limits Typ. Max. Min. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Case Style: XM Note: The RF parameters are measured on a lot basis by sample testing at an AQL = 0.1%, Level-II inspection. Any lot failure shall be 100% retested. FEATURES • High Output Power: P1dB=35.5dBm (Typ.) • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. |
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