4

For further information please contact:

FUJITSU COMPOUND SEMICONDUCTOR, INC.

2355 Zanker Rd.

San Jose, CA 95131-1138, U.S.A.

Phone: (408) 232-9500

FAX: (408) 428-9111

www.fcsi.fujitsu.com

FUJITSU MICROELECTRONICS, LTD.

Compound Semiconductor Division

Network House

Norreys Drive

Maidenhead, Berkshire SL6 4FJ

Phone:+44 (0)1628 504800

FAX:+44 (0)1628 504888

Fujitsu Limited reserves the right to change products and specifications without notice.

The information does not convey any license under rights of Fujitsu Limited or others.

© 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.

Printed in U.S.A. FCSI0598M200

Fujitsu Compound Semiconductor Products contain gallium arsenide

(GaAs) which can be hazardous to the human body and the environment.

For safety, observe the following procedures:

CAUTION

• Do not put these products into the mouth.

• Do not alter the form of this product into a gas, powder, or liquid

through burning, crushing, or chemical processing as these by-products

are dangerous to the human body if inhaled, ingested, or swallowed.

• Observe government laws and company regulations when discarding this

product. This product must be discarded in accordance with methods

specified by applicable hazardous waste procedures.

FLU17XM

L-Band Medium & High Power GaAs FET

3.8±0.15

(0.150)

3.35

(0.132)

Unit: mm(inches)

1. Gate

2. Source

3. Drain

2.865

(0.112)

3.13±0.15

2.265

(0.089)

2.0±0.15

Case Style "XM"

Metal-Ceramic Hermetic Package

2

1

3

0.7

(0.028)

6.3

(0.248)