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PNZ107F Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. PNZ107F
Description  Silicon NPN Phototransistors
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Maker  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
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PNZ107F Datasheet(HTML) 1 Page - Panasonic Semiconductor

   
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1
Phototransistors
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings
Unit
Collector to emitter voltage
VCEO
20
V
Collector to base voltage
VCBO*
30
V
Emitter to collector voltage
VECO
3V
Emitter to base voltage
VEBO*
5V
Collector current
IC
30
mA
Collector power dissipation
PC
150
mW
Operating ambient temperature
Topr
–25 to +85
˚C
Storage temperature
Tstg
–30 to +100
˚C
* PNZ108F only
Features
Flat window design which is suited to optical systems
Wide directional sensitivity for easy use
Fast response : tr = 8 µs (typ.)
Signal mixing capability using base pin (PNZ108F)
TO-18 standard type package
PNZ107F, PNZ108F
Silicon NPN Phototransistors
For optical control systems
1: Emitter
2: Collector
Unit : mm
ø4.6
±0.15
Glass window
2.54
±0.25
ø5.75 max.
2-ø0.45
±0.05
1
2
PNZ107F
1: Emitter
2: Base
3: Collector
Unit : mm
ø4.6
±0.15
Glass window
2.54
±0.25
ø5.75 max.
3-ø0.45
±0.05
1
3
2
PNZ108F


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