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PNA1401LF Datasheet(PDF) 2 Page - Panasonic Semiconductor

Part No. PNA1401LF
Description  Silicon NPN Phototransistors
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Maker  PANASONIC [Panasonic Semiconductor]
Homepage  http://www.panasonic.com/industrial/
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PNA1401LF Datasheet(HTML) 2 Page - Panasonic Semiconductor

   
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PNA1401LF, PNZ102F
Phototransistors
50
RL
td : Delay time
tr : Rise time (Time required for the collector photo current to
increase from 10% to 90% of its final value)
tf : Fall time (Time required for the collector photo current to
decrease from 90% to 10% of its initial value)
VCC
Sig.OUT
Sig.IN
(Input pulse)
(Output pulse)
10%
90%
td
tr
tf
PC — Ta
200
160
120
80
40
Ambient temperature
Ta (˚C )
0
20406080
100
0
– 20
ICE(L) — VCE
2.0
1.6
1.2
0.4
0.8
0
Collector to emitter voltage
V
CE (V)
0
8
16
24
32
ICE(L) — L
10
1
10 –1
10 –2
Illuminance
L (lx)
10
10 2
10 3
10 –3
1
VCE = 10V
Ta = 25˚C
T = 2856K
L = 50 lx
100 lx
200 lx
300 lx
400 lx
500 lx
600 lx
700 lx
800 lx
900 lx
1000 lx
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Dark current
ICEO
VCE = 10V
5
300
nA
Collector photo current
ICE(L)
VCE = 10V, L = 100 lx*1
0.1
0.3
mA
Peak sensitivity wave length
λ
P
VCE = 10V
800
nm
Acceptance half angle
θ
Measured from the optical axis to the half power point
40
deg.
Response time
tr, tf*2
VCC = 10V, ICE(L) = 5mA, RL = 100Ω
3
µs
Collector saturation voltage
VCE(sat)
L = 500 lx*1
PNA1401LF ICE(L) = 0.1mA
0.2
0.4
V
PNZ102F ICE(L) = 0.1mA
*1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source.
*2 Switching time measurement circuit


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